參數(shù)資料
型號: LMV851MGX
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 運(yùn)動(dòng)控制電子
英文描述: 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers
中文描述: OP-AMP, 1200 uV OFFSET-MAX, 8 MHz BAND WIDTH, PDSO5
封裝: SC-70, 5 PIN
文件頁數(shù): 4/22頁
文件大小: 994K
代理商: LMV851MGX
Symbol
Parameter
Conditions
Min
(Note 6)
105
102
Typ
(Note 5)
118
Max
(Note 6)
Units
A
VOL
Large Signal Voltage Gain
(Note 11)
R
L
= 2 k
,
V
OUT
= 0.15V to 2.5V,
V
OUT
= 4.85V to 2.5V
R
L
= 10 k
,
V
OUT
= 0.1V to 2.5V,
V
OUT
= 4.9V to 2.5V
R
L
= 2 k
to V
+
/2
dB
105
102
120
V
O
Output Swing High,
(measured from V
+
)
34
39
47
11
13
38
50
12
15
mV
R
L
= 10 k
to V
+
/2
7
Output Swing Low,
(measured from V
)
R
L
= 2 k
to V
+
/2
31
mV
R
L
= 10 k
to V
+
/2
7
I
O
Output Short Circuit Current
Sourcing, V
OUT
= V
CM
,
V
IN
= 100 mV
Sinking, V
OUT
= V
CM
,
V
IN
= 100 mV
LMV851
60
48
65
mA
58
44
62
I
S
Supply Current
0.43
0.52
0.60
0.93
1.09
1.73
2.05
mA
LMV852
0.82
LMV854
1.59
SR
Slew Rate (Note 7)
A
V
= +1, V
OUT
= 2 V
PP
,
10% to 90%
4.5
V/
μ
s
GBW
Φ
m
e
n
Gain Bandwidth Product
Phase Margin
8
MHz
64
deg
Input-Referred Voltage Noise
f = 1 kHz
f = 10 kHz
f = 1 kHz
11
10
nV/
i
n
R
OUT
C
IN
Input-Referred Current Noise
0.005
pA/
Closed Loop Output Impedance
f = 6 MHz
400
Common-Mode Input Capacitance
Differential-Mode Input Capacitance
Total Harmonic Distortion + Noise
f = 1 kHz, A
V
= 1, BW = >500 kHz
11
6
pF
THD+N
0.003
%
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics
Tables.
Note 2:
Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-
Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
Note 3:
The maximum power dissipation is a function of T
, θ
, and T
. The maximum allowable power dissipation at any ambient temperature is
P
D
= (T
J(MAX)
- T
A
)/ θ
JA
. All numbers apply for packages soldered directly onto a PC board.
Note 4:
Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating
of the device.
Note 5:
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will
also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.
Note 6:
Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using statistical quality
control (SQC) method.
Note 7:
Number specified is the slower of positive and negative slew rates.
Note 8:
The EMI Rejection Ratio is defined as EMIRR = 20log ( V
RFpeak
V
OS
).
Note 9:
The typical value is calculated by applying absolute value transform to the distribution, then taking the statistical average of the resulting distribution
Note 10:
This parameter is guaranteed by design and/or characterization and is not tested in production.
Note 11:
The specified limits represent the lower of the measured values for each output range condition.
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LMV852 制造商:NSC 制造商全稱:National Semiconductor 功能描述:8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers
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LMV852MM 制造商:Texas Instruments 功能描述:OP Amp Dual GP R-R O/P 5.5V 8-Pin MSOP T/R
LMV852MM/NOPB 功能描述:運(yùn)算放大器 - 運(yùn)放 RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比(最小值):63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流(最大值):10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel