- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361042 > LMV243BL (NATIONAL SEMICONDUCTOR CORP) Single-Channel, Quad-Band GSM Power Controller in micro SMD PDF資料下載
參數(shù)資料
| 型號： | LMV243BL |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 通信及網(wǎng)絡(luò) |
| 英文描述： | Single-Channel, Quad-Band GSM Power Controller in micro SMD |
| 中文描述： | SPECIALTY TELECOM CIRCUIT, PBGA8 |
| 封裝： | 1.50 X 1.50 MM, 0.995 MM HEIGHT, MICRO, BUMP, SMD-8 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大小： | 885K |
| 代理商： | LMV243BL |
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 1)
Supply Voltage
V
DD
- GND
ESD Tolerance (Note 2)
Human Body Model
Machine Model
Storage Temperature Range
Junction Temperature (Note 6)
4V Max
2000V
200V
65C to 150C
150C Max
Mounting Temperature
Infrared or convection (20 sec)
235C
Operating Ratings
(Note 1)
Nominal Supply Voltage
Temperature Range
V
RAMP
Voltage Range
V
HOME
Voltage Range
RF Frequency Range
2.7V to 3.3V
40C
<
T
J
<
85C
0V to 2V
0V to 2V
450MHz to 2GHz
Electrical Characteristics
Boldface
limits apply at temperature extremes.
Unless otherwise specified, all limits are guaranteed to T
J
= 25C. V
DD
= 2.8V.
Symbol
I
DD
Parameter
Condition
Min
Typ
8.7
Max
10.5
12.5
30
Units
mA
Supply Current
V
OUT
= (V
DD
- GND)/2
In Shutdown (TX_EN = 0.8V)
V
OUT
= (V
DD
- GND)/2
(Note 7)
(Note 7)
4.6
μA
V
HIGH
V
LOW
T
ON
Logic Level to Enable Power
Logic Level to Disable Power
Turn-on- Time from Shutdown
1.8
V
V
μs
0.8
6.5
7.5
5
3.7
I
EN
RAMP Amplifier
V
RD
Current into TX_EN Pin
0.108
μA
V
RAMP
Deadband
170
150
210
250
270
mV
1/R
RAMP
I
OUT RAMP
RF Input
P
IN
Transconductance
Ramp Amplifier Output Current
(Note 8)
V
RAMP
= 2V
78
140
μa/V
μA
100
RF Input Power Range (Note 5)
20k
// 27pF between V
OUT
and V
COMP
50
+5
63
7
1.79
dBm
dBV
Logarithmic Slope (Note 9)
@
900MHz, 20k
// 27pF
between V
OUT
and V
COMP
@
1800MHz, 20k
// 27pF
between V
OUT
and V
COMP
@
1900MHz, 20k
// 27pF
between V
OUT
and V
COMP
@
900MHz, 20k
// 27pF
between V
OUT
and V
COMP
@
1800MHz, 20k
// 27pF
between V
OUT
and V
COMP
@
1900MHz, 20k
// 27pF
between V
OUT
and V
COMP
(Note 8)
(Note 8)
μa/dB
1.89
1.89
Logarithmic Intercept (Note 9)
50.5
dBm
46.9
45.9
R
IN
C
IN
Error Amplifier
GBW
DC Resistance
Input Capacitance
50
0.5
pF
Gain-Bandwidth Product
(Note 8)
7.6
MHz
L
www.national.com
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LMV243BLX | Single-Channel, Quad-Band GSM Power Controller in micro SMD |
| LMV243 | Single-Channel, Quad-Band GSM Power Controller in micro SMD |
| LMV248LQ | Dual Band GSM Power Controller |
| LMV248 | Dual Band GSM Power Controller |
| LMV248LQX | Electrical Tape; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LMV243BLEVAL | 功能描述:電源管理IC開發(fā)工具 LMV243BL EVAL BOARD RoHS:否 制造商:Maxim Integrated 產(chǎn)品:Evaluation Kits 類型:Battery Management 工具用于評估:MAX17710GB 輸入電壓: 輸出電壓:1.8 V |
| LMV243BLX | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Single-Channel, Quad-Band GSM Power Controller in micro SMD |
| LMV243BLX/NOPB | 功能描述:IC GSM POWER CTLR 8USMD RoHS:是 類別:RF/IF 和 RFID >> RF 電源控制器 IC 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- RF 型:GSM 頻率:450MHz ~ 2GHz 特點:四頻帶 封裝/外殼:8-VFBGA 供應(yīng)商設(shè)備封裝:8-MicroSMD（1.51x1.51） 包裝:帶卷 (TR) 其它名稱:LMV243BLX |
| LMV248 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Dual Band GSM Power Controller |
| LMV248LQ | 功能描述:IC CTROL DUAL BAND PWR 16-LLP RoHS:否 類別:RF/IF 和 RFID >> RF 電源控制器 IC 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- RF 型:GSM 頻率:450MHz ~ 2GHz 特點:四頻帶 封裝/外殼:8-VFBGA 供應(yīng)商設(shè)備封裝:8-MicroSMD（1.51x1.51） 包裝:帶卷 (TR) 其它名稱:LMV243BLX |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。