參數(shù)資料
型號(hào)： LMH6502
廠商： National Semiconductor Corporation
英文描述： Wideband, Low Power, Linear-in-dB Variable Gain Amplifier
中文描述： 寬帶，低功耗，線性以dB可變?cè)鲆娣糯笃?/td>
文件頁(yè)數(shù)： 2/19頁(yè)
文件大?。?/td> 941K
代理商： LMH6502
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance (Note 4):
Human Body
Machine Model
Input Current
V
IN
Differential
Output Current
Supply Voltages (V
+
- V
)
Voltage at Input/ Output pins
Storage Temperature Range
2KV
200V
±
10mA
±
(V
+
-V
)
120mA (Note 3)
12.6V
V
+
+0.8V,V
- 0.8V
65C to +150C
Junction Temperature
Soldering Information:
Infrared or Convection (20 sec)
Wave Soldering (10 sec)
+150C
235C
260C
Operating Ratings
(Note 1)
Supply Voltages (V
+
- V
)
Temperature Range
Thermal Resistance:
14-Pin SOIC
14-Pin TSSOP
5V to 12V
40C to +85C
(
θ
JA
)
138C/W
160C/W
(
θ
JC
)
45C/W
51C/W
Electrical Characteristics
(Note 2)
Unless otherwise specified, all limits guaranteed for T
J
= 25C, V
S
=
±
5V, A
V(MAX)
= 10, V
CM
= 0V, R
F
= 1k
, R
G
= 174
,
V
IN_DIFF
=
±
0.1V, R
L
= 100
, V
G
= +2V.
Boldface
limits apply at the temperature extremes.
Symbol
Frequency Domain Response
BW
-3dB Bandwidth
Parameter
Conditions
Min
(Note 6)
Typ
(Note 6)
Max
(Note 6)
Units
V
OUT
<
0.5
PP
V
OUT
<
0.5
PP
, A
V(MAX)
= 100
V
OUT
<
0.5V
PP
0.6V
≤
V
G
≤
2V,
±
0.3dB
±
0.2dB, f
<
30MHz
±
0.1dB, f
<
30MHz
V
G
= 1V (Note 13)
130
50
30
MHz
GF
Gain Flatness
MHz
Att Range
Flat Band (Relative to Max Gain)
Attenuation Range (Note 14)
16
7.5
100
dB
BW
Control
PL
G Delay
CT (dB)
Gain control Bandwidth
MHz
Linear Phase Deviation
Group Delay
Feed-through
DC to 60MHz
DC to 130MHz
V
G
= 0V, 30MHz (Output
Referred)
f
<
10MHz
f
<
30MHz
1.5
2.5
47
deg
ns
dB
GR
Gain Adjustment Range
72
67
dB
Time Domain Response
t
r
, t
f
Rise and Fall Time
OS %
Overshoot
SR
Slew Rate
G Rate
Gain Change Rate
0.5V Step
0.5V Step
4V Step
V
IN
= 0.3V, 10%-90% of Final
Output
2.2
10
1800
4.8
ns
%
V/μs
dB/ns
Distortion & Noise Performance
HD2
2
nd
Harmonic Distortion
HD3
3
rd
Harmonic Distortion
THD
Total Harmonic Distortion
En tot
Total Equivalent Input Noise
I
N
Input Noise Current
DG
Differential Gain
2V
PP
, 20MHz
2V
PP
, 20MHz
2V
PP
, 20MHz
1MHz to 150MHz
1MHz to 150MHz
f = 4.43MHz, R
L
= 150
,
Neg. Sync
f = 4.43MHz, R
L
= 150
,
Neg. Sync
55
57
53
7.7
2.4
0.34
dBc
dBc
dBc
nV/
pA/
%
DP
Differential Phase
0.10
deg
L
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相關(guān)PDF資料
PDF描述
LMH6502MA Wideband, Low Power, Linear-in-dB Variable Gain Amplifier
LMH6502MAX Wideband, Low Power, Linear-in-dB Variable Gain Amplifier
LMH6502MT Wideband, Low Power, Linear-in-dB Variable Gain Amplifier
LMH6502MTX Wideband, Low Power, Linear-in-dB Variable Gain Amplifier
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LMH6502MA 功能描述:特殊用途放大器 RoHS:否 制造商:Texas Instruments 通道數(shù)量:Single 共模抑制比（最小值）: 輸入補(bǔ)償電壓: 工作電源電壓:3 V to 5.5 V 電源電流:5 mA 最大功率耗散: 最大工作溫度:+ 70 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-20 封裝:Reel
LMH6502MA/NOPB 功能描述:特殊用途放大器 Wdbd, Lo Pwr, Linear -in-dB Var Gain Amp RoHS:否 制造商:Texas Instruments 通道數(shù)量:Single 共模抑制比（最小值）: 輸入補(bǔ)償電壓: 工作電源電壓:3 V to 5.5 V 電源電流:5 mA 最大功率耗散: 最大工作溫度:+ 70 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-20 封裝:Reel
LMH6502MAX 功能描述:特殊用途放大器 RoHS:否 制造商:Texas Instruments 通道數(shù)量:Single 共模抑制比（最小值）: 輸入補(bǔ)償電壓: 工作電源電壓:3 V to 5.5 V 電源電流:5 mA 最大功率耗散: 最大工作溫度:+ 70 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-20 封裝:Reel
LMH6502MAX/NOPB 功能描述:特殊用途放大器 RoHS:否 制造商:Texas Instruments 通道數(shù)量:Single 共模抑制比（最小值）: 輸入補(bǔ)償電壓: 工作電源電壓:3 V to 5.5 V 電源電流:5 mA 最大功率耗散: 最大工作溫度:+ 70 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-20 封裝:Reel
LMH6502MT 功能描述:特殊用途放大器 RoHS:否 制造商:Texas Instruments 通道數(shù)量:Single 共模抑制比（最小值）: 輸入補(bǔ)償電壓: 工作電源電壓:3 V to 5.5 V 電源電流:5 mA 最大功率耗散: 最大工作溫度:+ 70 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-20 封裝:Reel
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