參數(shù)資料
型號(hào): LMC660AIN
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 運(yùn)動(dòng)控制電子
英文描述: CMOS Quad Operational Amplifier
中文描述: QUAD OP-AMP, 3300 uV OFFSET-MAX, 1.4 MHz BAND WIDTH, PDIP14
封裝: DIP-14
文件頁數(shù): 1/14頁
文件大小: 461K
代理商: LMC660AIN
LMC660
CMOS Quad Operational Amplifier
General Description
The LMC660 CMOS Quad operational amplifier is ideal for
operation from a single supply. It operates from +5V to +15V
and features rail-to-rail output swing in addition to an input
common-mode range that includes ground. Performance
limitations that have plagued CMOS amplifiers in the past
are not a problem with this design. Input V
, drift, and
broadband noise as well as voltage gain into realistic loads
(2 k
and 600
) are all equal to or better than widely ac-
cepted bipolar equivalents.
This chip is built with National’s advanced Double-Poly
Silicon-Gate CMOS process.
See the LMC662 datasheet for a dual CMOS operational
amplifier with these same features.
Features
n
Rail-to-rail output swing
n
Specified for 2 k
and 600
loads
n
High voltage gain:
n
Low input offset voltage:
n
Low offset voltage drift:
126 dB
3 mV
1.3 μV/C
n
Ultra low input bias current:
n
Input common-mode range includes V
n
Operating range from +5V to +15V supply
n
I
SS
= 375 μA/amplifier; independent of V
+
n
Low distortion:
0.01% at 10 kHz
n
Slew rate:
1.1 V/μs
n
Available in extended temperature range (40C to
+125C); ideal for automotive applications
n
Available to Standard Military Drawing specification
2 fA
Applications
n
High-impedance buffer or preamplifier
n
Precision current-to-voltage converter
n
Long-term integrator
n
Sample-and-Hold circuit
n
Peak detector
n
Medical instrumentation
n
Industrial controls
n
Automotive sensors
Connection Diagram
14-Pin DIP/SO
DS008767-1
April 1998
L
1999 National Semiconductor Corporation
DS008767
www.national.com
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