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參數(shù)資料
| 型號： | LMBTH10QLT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | VHF/UHF Transistors |
| 中文描述： | 甚高頻/超高頻晶體管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 137K |
| 代理商： | LMBTH10QLT1 |
LESHAN RADIO COMPANY, LTD.
LMBTH10QLT1–1/5
LMBTH10QLT1
VHF/UHF Transistors
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
25
Vdc
Collector–Base Voltage
V
CBO
30
Vdc
Emitter–Base Voltage
V
EBO
3.0
Vdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
P
D
225
mW
1.8
mW/°C
R
θ
JA
556
°C/W
P
D
300
2.4
mW
mW/°C
R
θ
JA
T
J
, T
stg
417
°C/W
°C
–55 to +150
DEVICE MARKING
LMBTH10QLT1 = 3EQ
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0 )
Collector–Base Breakdown Voltage
(I
C
= 100
μ
Adc , I
Emitter–Base Breakdown Voltage
(I
E
= 10
μ
Adc , I
Collector Cutoff Current
( V
CB
= 25Vdc , I
Emitter Cutoff Current
( V
EB
= 2.0Vdc , I
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)CEO
25
—
—
Vdc
V
(BR)CBO
30
—
—
Vdc
E
= 0)
V
(BR)EBO
3.0
—
—
Vdc
C
= 0)
I
CBO
—
—
100
nAdc
E
= 0 )
I
EBO
—
—
100
nAdc
C
= 0 )
2
EMITTER
COLLECTOR
1
BASE
SOT
-
23
1
3
2
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