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參數(shù)資料
| 型號(hào)： | LMBTA42LT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | HighVoltageTransistors |
| 中文描述： | HighVoltageTransistors |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 85K |
| 代理商： | LMBTA42LT1G |
LESHAN RADIO COMPANY, LTD.
LMBTA42/43LT1-1/4
1
3
2
LMBTA42LT1
LMBTA43LT1
SOT–23
HighVoltageTransistors
MAXIMUM RATINGS
Rating
Symbol
LMBTA42 LMBTA43
Unit
Collector–Emitter Voltage
V
CEO
300
200
Vdc
Collector–Base Voltage
V
CBO
300
200
Vdc
Emitter–Base Voltage
V
EBO
6.0
6.0
Vdc
Collector Current — Continuous
I
C
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
P
D
225
mW
1.8
556
mW/°C
°C/W
R
θ
JA
P
D
300
mW
2.4
417
mW/°C
°C/W
°C
R
θ
JA
T
J
, T
stg
–55 to +150
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
Vdc
LMBTA42
LMBTA43
300
200
—
—
Collector–Base Breakdown Voltage V
(BR)CBO
(I
C
= 100
μ
Adc, I
E
= 0)
Vdc
LMBTA42
LMBTA43
300
200
—
—
Emitter–Base Breakdown Voltage
(I
E
= 100
μ
Adc, I
C
= 0)
Collector Cutoff Current
( V
CB
= 200Vdc, I
E
= 0)
( V
CB
= 160Vdc, I
E
= 0)
Emitter Cutoff Current
( V
EB
= 6.0Vdc, I
C
= 0)
V
(BR)EBO
6.0
—
Vdc
I
CBO
μ
Adc
LMBTA42
LMBTA43
—
—
0.1
0.1
I
EBO
μ
Adc
LMBTA42
—
0.1
( V
EB
= 4.0Vdc, I
C
= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
<
300
μ
s, Duty Cycle
<
2.0%.
LMBTA43
—
0.1
Value
2
EMITTER
3
COLLECTOR
1
BASE
Pb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Package
Shipping
LMBTA42LT1
1D
SOT-23
3000/Tape&Reel
LMBTA42LT1G
1D
(Pb-Free)
SOT-23
3000/Tape&Reel
LMBTA43LT1
M1E
SOT-23
3000/Tape&Reel
LMBTA43LT1G
M1E
(Pb-Free)
SOT-23
3000/Tape&Reel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LMBTA43LT1 | HighVoltageTransistors |
| LMBTA43LT1G | HighVoltageTransistors |
| LMBTA92LT1 | HighVoltageTransistor PNP Silicon |
| LMBTA92LT1G | HighVoltageTransistor PNP Silicon |
| LMBTA93LT1 | HighVoltageTransistor PNP Silicon |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LMBTA42LT1G_11 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:HighVoltageTransistors RoHS requirements. |
| LMBTA43LT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:HighVoltageTransistors |
| LMBTA43LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:HighVoltageTransistors |
| LMBTA44LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR High Breakdown Voltage: VCEO=400 |
| LMBTA55LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Driver Transistors PNP Silicon RoHS requirements. |
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