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參數(shù)資料
| 型號(hào)： | LMBT6520LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | High Voltage Transistor |
| 中文描述： | 高壓晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 171K |
| 代理商： | LMBT6520LT1 |
LESHAN RADIO COMPANY, LTD.
LMBT6520–1/6
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
–350
Vdc
Collector–Base Voltage
V
CBO
–350
Vdc
Emitter–Base Voltage
V
EBO
–5.0
Vdc
Base Current
I
B
–250
mA
Collector Current — Continuous
I
C
–500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
Unit
mW
1.8
556
300
mW/°C
°C/W
mW
R
θ
JA
P
D
2.4
417
mW/°C
°C/W
°C
R
θ
JA
T
J
, T
stg
–55 to +150
DEVICE MARKING
LMBT6520LT1 = 2Z
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I
C
= –1.0 mA )
Collector–Base Breakdown Voltage(I
E
= –100
μ
A )
Emitter–Base Breakdown Voltage(I
E
= –10
μ
A)
Collector Cutoff Current( V
CB
= –250V )
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
–350
–350
–5.0
—
—
—
—
–50
Vdc
Vdc
Vdc
nA
Emitter Cutoff Current( V
EB
= –4.0V )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
I
EBO
—
–50
nA
1
3
2
LMBT6520LT1
SOT–23
High Voltage Transistor
2
EMITTER
COLLECTOR
1
BASE
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| LMBT6520LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:High Voltage Transistor |
| LMBT6520LT1G_11 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:High Voltage Transistor PNP Silicon RoHS requirements. |
| LMBT6520LT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:High Voltage Transistor PNP Silicon RoHS requirements. |
| LMBT918LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:VHF / UFH Transistor |
| LMBT918LT1G_11 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:VHF / UFH Transistor NPN Silicon RoHS requirements. |
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