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參數(shù)資料
| 型號： | LMBT4403LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors (PNP SILICON) |
| 中文描述： | 通用晶體管（民進黨硅） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 223K |
| 代理商： | LMBT4403LT1 |
LESHAN RADIO COMPANY, LTD.
O15–1/5
MAXIMUM RATINGS
Rating
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
– 40
– 40
– 5.0
– 600
Unit
Vdc
Vdc
Vdc
mAdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR –5 Board (1)
T
A
=25 °C
Derate above 25°C
Symbol
P
D
Max
225
Unit
mW
1.8
mW/°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θ
JA
P
D
556
300
°C/W
mW
2.4
417
mW/°C
°C/W
°C
R
θ
JA
T
J
, T
stg
–55 to +150
DEVICE MARKING
LMBT4403LT1 = 2T
ELECTRICAL CHARACTERISTICS
(T
A
= 2
5°
C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I
C
= –1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= –0.1mAdc, I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= –0.1mAdc, I
C
= 0)
Base Cutoff Current
(V
CE
= –35 Vdc, V
EB
= –0.4 Vdc)
Collector Cutoff Current
(V
CE
= –35 Vdc, V
EB
= –0.4 Vdc)
Symbol
Min
Max
Unit
V
(BR)CEO
Vdc
– 40
—
V
(BR)CBO
Vdc
– 40
—
V
(BR)EBO
Vdc
– 5.0
—
I
BEV
μ
Adc
—
– 0.1
I
CEX
μ
Adc
—
– 0.1
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
<
300
μ
s; Duty Cycle
<
2.0%.
1
3
2
L
MBT4403LT1
SOT– 23 (TO–236AB)
General Purpose Transistors
PNP Silicon
2
EMITTER
3
COLLECTOR
1
BASE
Device
Package
Shipping
LMBT4403LT1
SO
T
–
23
3000/Tape & Reel
LMBT4403LT1
G
SO
T
–
23
3000/Tape & Reel
ORDERING INFORMATION
PbFree Package May be Available. The GSuffix Denotes a
PbFree Lead Finish
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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| LMBT5087LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Low Noise Transistor |
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