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參數(shù)資料
| 型號： | LMBT2369LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Switching Transistors |
| 中文描述： | 開關晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 233K |
| 代理商： | LMBT2369LT1 |
LESHAN RADIO COMPANY, LTD.
LMBT2369LT1–1/6
1
3
2
LMBT2369LT1
LMBT2369ALT1
SC-70/SOT–323
Switching Transistors
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
15
Vdc
Collector–Emitter Voltage
V
CES
40
Vdc
Collector–Base Voltage
V
CBO
40
Vdc
Emitter–Base Voltage
V
EBO
4.5
Vdc
Collector Current — Continuous
I
C
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
P
D
Max
225
Unit
mW
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1.8
556
300
mW/°C
°C/W
mW
R
θ
JA
P
D
2.4
417
mW/°C
°C/W
°C
R
θ
JA
T
J
, T
stg
–55 to +150
DEVICE MARKING
LMBT2369LT1 = M1J, LMBT2369ALT1 = 1JA
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I
C
= 10 mAdc, I
B
= 0)
Collector–Emitter Breakdown Voltage
(I
C
= 10
μ
Adc, V
BE
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
μ
Adc, I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 10
μ
Adc, I
C
= 0)
Collector Cutoff Current( V
CB
= 20Vdc, I
E
= 0)
( V
CB
= 20Vdc, I
E
= 0, T
A
=150 °C)
Collector Cutoff Current
( V
CE
= 20Vdc, V
BE
= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
<
300
μ
s, Duty Cycle
<
2.0%.
V
(BR)CEO
—
—
Vdc
V
(BR)CES
40
—
—
Vdc
V
(BR)CBO
40
—
—
Vdc
V
(BR)EBO
4.5
—
—
Vdc
I
CBO
—
—
—
—
0.4
30
μ
Adc
I
CES
—
—
0.4
μ
Adc
LMBT2369A
2
EMITTER
3
COLLECTOR
1
BASE
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相關代理商/技術參數(shù) |
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| LMBT2369LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Switching Transistors |
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| LMBT2907-ALT1G | 制造商:LRC 功能描述:-60V,-0.6A,225mW,PNP General Purpose Transistor |
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