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參數(shù)資料
| 型號(hào)： | LMBD2838LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Monolithic Dual Switching Diodes |
| 中文描述： | 單片雙開關(guān)二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 117K |
| 代理商： | LMBD2838LT1 |
LESHAN RADIO COMPANY, LTD.
G21–1/3
MAXIMUM RATINGS(EACH DIODE)
Rating
Peak Reverse Voltage
D.C Reverse Voltage LMBD2837LT1
LMBD2838LT1
Peak Forward Current
Symbol
V
RM
V
R
Value
75
30
50
450
300
150
100
Unit
Vdc
Vdc
I
FM
mAdc
Average Rectified Current
I
O
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board
(1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
LMBD2837LT1 = A5; LMBD2838LT1 = MA6
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) ( EACH DIODE )
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I
(BR)
= 100
μ
Adc) LMBD2837LT1
LMBD2838LT1
Reverse Voltage Leakage Current
(V
R
= 30 Vdc) LMBD2837LT1
(V
R
= 50 Vdc) LMBD2838LT1
Diode Capacitance
(V
R
= 0 V, f = 1.0 MHz)
Forward Voltage(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 100 mAdc)
Reverse Recovery Time
(I
F
=I
R
=10mAdc,I
R(REC)
=1.0mAdc)(Figure 1)
t
rr
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
P
D
Max
225
Unit
mW
1.8
556
300
mW/°C
°C/W
mW
R
θ
JA
P
D
2.4
417
mW/°C
°C/W
°C
R
θ
JA
T
J
, T
stg
–55 to +150
Symbol
Min
Max
Unit
V
(BR)
35
75
—
—
—
—
Vdc
I
R
μ
Adc
0.1
0.1
C
T
—
4.0
pF
V
F
—
—
—
—
1.0
1.0
1.2
4.0
Vdc
ns
Monolithic Dual Switching Diodes
3
CATHODE
ANODE
1
2
ANODE
1
3
2
SOT– 23 (TO–236AB)
LMBD283
7
LT1
LMBD283
8
LT1
FETURE
Pb-Free Package is available.
ORDERING INFORMATION
Device
Marking
Shipping
LMBD283
7
LT1
A
5
3000/Tape&Reel
LMBD283
7
LT1G
A
5
(Pb-Free)
3000/Tape&Reel
LMBD283
8
LT1
MA6
3000/Tape&Reel
LMBD283
8
LT1G
MA6
(Pb-Free)
3000/Tape&Reel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LMBD2838LT1G | Monolithic Dual Switching Diodes |
| LMBD3004SLT3G | HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE |
| LMBD3004SLT1G | HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE |
| LMBD301LT1 | Silicon Hot-Carrier Diodes Schottky Barrier Diodes |
| LMBD7000LT1 | Dual Switching Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LMBD2838LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Monolithic Dual Switching Diodes |
| LMBD3004SLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE |
| LMBD3004SLT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE |
| LMBD301LT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Silicon Hot-Carrier Diodes Schottky Barrier Diodes |
| LMBD301LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Silicon Hot-Carrier Diodes Schottky Barrier Diodes |
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