參數(shù)資料
型號: LM95245
廠商: National Semiconductor Corporation
元件分類: 溫度/濕度傳感器
英文描述: Precision Remote Diode Digital Temperature Sensor with TruTherm⑩ BJT Beta Compensation Technology for 45nm Process
中文描述: 高精度遠程二極管數(shù)字溫度傳感器的45納米工藝的TruTherm⑩晶體管測試補償技術(shù)
文件頁數(shù): 7/24頁
文件大?。?/td> 342K
代理商: LM95245
Notes
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
guaranteed to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics.
The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under
the listed test conditions. Operation of the device beyond the maximum Operating Ratings is not recommended.
Note 2:
Thermal resistance junction-to-ambient when attached to a printed circuit board with 1 oz. foil and no airflow is:
θ
JA
for MSOP-8 package = 210°C/W
Note 3:
Human body model (HBM) is a charged 100 pF capacitor discharged into a 1.5 k
Ω
resistor. Machine model (MM), is a charged 200 pF capacitor discharged
directly into each pin. Charged Device Model (CDM) simulates a pin slowly acquiring charge (such as from a device sliding down the feeder in an automated
assembler) then rapidly being discharged.
Note 4:
When the input voltage (V
I
) at any pin exceeds the power supplies (V
I
< GND or V
I
> V
DD
), the current at that pin should be limited to 5 mA.
Parasitic components and or ESD protection circuitry are shown in the figures below for the LM95245's pins. Care should be taken not to forward bias the parasitic
diodes on pins 2 and 3. Doing so by more than 50 mV may corrupt the temperature measurements. SNP refers to Snap-back device.
Pin #
Label
V
DD
D+
D
T_CRIT
GND
OS/A0
SMBDAT
Circuit
Pin ESD Protection Structure Circuits
1
B
Circuit A
Circuit C
Circuit B
2
3
4
5
6
7
A
A
C
B
C
C
8
SMBCLK
C
Note 5:
Reflow temperature profiles are different for packages containing lead (Pb) than for those that do not.
Note 6:
Typical figures are at T
A
= 25°C and represent most likely parametric norms at the time of product characterization. The typical specifications are not
guaranteed.
Note 7:
Limits are guaranteed to National's AOQL (Average Outgoing Quality Level).
Note 8:
Local temperature accuracy does not include the effects of self-heating. The rise in temperature due to self-heating is the product of the internal power
dissipation of the LM95245 and the thermal resistance. See
(Note 2)
for the thermal resistance to be used in the self-heating calculation.
Note 9:
The accuracy of the LM95245 is guaranteed when using a typical thermal diode of an Intel processor on a 45 nm process, as selected in the Remote
Diode Model Select register. See typical performance curve for performance with Intel processor on a 65nm or 90nm process.
Note 10:
This specification is provided only to indicate how often temperature data is updated. The LM95245 can be read at any time without regard to conversion
state (and will yield last conversion result).
Note 11:
Quiescent current will not increase substantially when the SMBus is active.
Note 12:
The output rise time is measured from (V
IN(0)
max - 0.15V) to (V
IN(1)
min + 0.15V).
Note 13:
The output fall time is measured from (V
IN(1)
min + 0.15V) to (V
IN(0)
max - 0.15V).
Note 14:
Holding the SMBDAT and/or SMBCLK lines Low for a time interval greater than t
TIMEOUT
will reset the LM95245's SMBus state machine, therefore setting
SMBDAT and SMBCLK pins to a high impedance state.
7
www.national.com
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