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參數(shù)資料
| 型號(hào)： | LM883AJ |
| 廠商： | National Semiconductor Corporation |
| 元件分類： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | Low Power Quad Operational Amplifiers |
| 中文描述： | 低功耗四運(yùn)算放大器 |
| 文件頁數(shù)： | 4/27頁 |
| 文件大?。?/td> | 889K |
| 代理商： | LM883AJ |
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Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage, V
+
Differential Input Voltage
Input Voltage
Input Current
(V
IN
<
0.3Vdc) (Note 4)
Power Dissipation (Note 2)
CERDIP
CERPACK
LCC
CERAMIC SOIC
Output Short-Circuit to GND
(One Amplifier) (Note 3)
V
+
≤
15Vdc and T
A
= 25C
Operating Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10 seconds)
Thermal Resistance ThetaJA
CERDIP
(Still Air)
(500LF/Min Air flow)
CERPACK
(Still Air)
(500LF/Min Air flow)
LCC
(Still Air)
(500LF/Min Air flow)
CERAMIC SOIC
(Still Air)
(500LF/Min Air flow)
ThetaJC
CERDIP
CERPACK
LCC
CERAMIC SOIC
Package Weight (Typical)
CERDIP
CERPACK
LCC
CERAMIC SOIC
ESD Tolerance (Note 5)
32Vdc or +16Vdc
32Vdc
0.3Vdc to +32Vdc
50 mA
1260mW
700mW
1350mW
700mW
Continuous
55C
≤
T
A
≤
+125C
150C
65C
≤
T
A
≤
+150C
260C
103 C/W
51 C/W
176 C/W
116 C/W
91 C/W
66 C/W
176 C/W
116 C/W
19 C/W
18 C/W
24 C/W
18 C/W
TBD
TBD
TBD
410mg
250V
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2:
The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package
junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax = (Tjmax -
TA)/ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower.
Note 3:
Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output
current is approximately 40mAindependent of the magnitude of V+.At values of supply voltage in excess of +15Vdc, continuous short-circuits can exceed the power
dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers.
Note 4:
This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP
transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action
on the IC chip. This transistor action can cause the output voltages of the op amps to go to the V+ voltage level (or to ground for a large overdrive) for the time
duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns
to a value greater than -0.3Vdc (at 25 C).
Note 5:
Human body model, 1.5 k
in series with 100 pF.
L
www.national.com
4
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