參數(shù)資料
型號: LM567LD
英文描述: Analog Phase-Locked Loop
中文描述: 模擬鎖相環(huán)
文件頁數(shù): 2/8頁
文件大?。?/td> 296K
代理商: LM567LD
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage Pin
Power Dissipation (Note 2)
V
8
V
3
V
3
Storage Temperature Range
9V
1100 mW
15V
10V
V
4
+ 0.5V
65C to +150C
Operating Temperature Range
LM567H
LM567CH, LM567CM, LM567CN
Soldering Information
Dual-In-Line Package
Soldering (10 sec.)
Small Outline Package
Vapor Phase (60 sec.)
Infrared (15 sec.)
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
55C to +125C
0C to +70C
260C
215C
220C
Electrical Characteristics
AC Test Circuit, T
A
= 25C, V
+
= 5V
Parameters
Conditions
LM567
Typ
5.0
6
11
20
20
15
LM567C/LM567CM
Min
Typ
4.75
5.0
Units
Min
4.75
Max
9.0
8
13
Max
9.0
10
15
Power Supply Voltage Range
Power Supply Current Quiescent
Power Supply Current Activated
Input Resistance
Smallest Detectable Input Voltage
Largest No Output Input Voltage
Largest Simultaneous Outband Signal to
Inband Signal Ratio
Minimum Input Signal to Wideband Noise
Ratio
Largest Detection Bandwidth
Largest Detection Bandwidth Skew
Largest Detection Bandwidth Variation
with Temperature
Largest Detection Bandwidth Variation
with Supply Voltage
Highest Center Frequency
Center Frequency Stability (4.75–5.75V)
V
R
L
= 20k
R
L
= 20k
7
12
20
20
15
mA
mA
k
18
15
I
L
= 100 mA, f
i
= f
o
I
C
= 100 mA, f
i
= f
o
25
25
mVrms
mVrms
10
10
6
6
dB
B
n
= 140 kHz
6
6
dB
12
14
1
16
2
10
14
2
18
3
% of f
o
% of f
o
±
0.1
±
0.1
%/C
4.75–6.75V
±
1
±
2
±
1
±
5
%V
100
500
100
500
kHz
0
<
T
A
<
70
55
<
T
A
<
+125
35
±
60
35
±
140
0.5
35
±
60
35
±
140
0.4
ppm/C
ppm/C
Center Frequency Shift with Supply
Voltage
Fastest ON-OFF Cycling Rate
Output Leakage Current
Output Saturation Voltage
4.75V–6.75V
4.75V–9V
1.0
2.0
2.0
2.0
%/V
%/V
f
o
/20
0.01
0.2
0.6
30
150
f
o
/20
0.01
0.2
0.6
30
150
V
8
= 15V
e
i
= 25 mV, I
8
= 30 mA
e
i
= 25 mV, I
8
= 100 mA
25
0.4
1.0
25
0.4
1.0
μA
V
Output Fall Time
Output Rise Time
ns
ns
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func-
tional, but do not guarantee specific performance limits. Electrical Characteristics state DC andAC electrical specifications under particular test conditions which guar-
antee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is
given, however, the typical value is a good indication of device performance.
Note 2:
The maximum junction temperature of the LM567 and LM567C is 150C. For operating at elevated temperatures, devices in the TO-5 package must be de-
rated based on a thermal resistance of 150C/W, junction to ambient or 45C/W, junction to case. For the DIP the device must be derated based on a thermal resis-
tance of 110C/W, junction to ambient. For the Small Outline package, the device must be derated based on a thermal resistance of 160C/W, junction to ambient.
Note 3:
Refer to RETS567X drawing for specifications of military LM567H version.
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