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參數(shù)資料
| 型號(hào)： | LM5111 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | Dual 5A Compound Gate Driver |
| 中文描述： | 復(fù)合門(mén)驅(qū)動(dòng)器雙5A條 |
| 文件頁(yè)數(shù)： | 9/10頁(yè) |
| 文件大?。?/td> | 205K |
| 代理商： | LM5111 |
Thermal Performance
(Continued)
We know that the junction temperature is given by
T
J
= P
D
x
θ
JA
+ T
A
Or the rise in temperature is given by
T
RISE
= T
J
T
A
= P
D
x
θ
JA
For SOIC-8 package
θ
is estimated as 170C/W for the
conditions of natural convection.
Therefore T
RISE
is equal to
T
RISE
= 0.236 x 170 = 40.1C
CONTINUOUS CURRENT RATING OF LM5111
The LM5111 can deliver pulsed source/sink currents of 3A
and 5A to capacitive loads. In applications requiring continu-
ous load current (resistive or inductive loads), package
power dissipation, limits the LM5111 current capability far
below the 5A sink/3A source capability. Rated continuous
current can be estimated both when sourcing current to or
sinking current from the load. For example when sinking, the
maximum sink current can be calculated as:
where R
(on) is the on resistance of lower MOSFET in the
output stage of LM5111.
Consider T
(max) of 125C and
θ
of 170C/W for an SO-8
package under the condition of natural convection and no air
flow. If the ambient temperature (T
) is 60C, and the R
D-
S
(on) of the LM5111 output at T
(max) is 2.5
, this equation
yields I
(max) of 391mA which is much smaller than 5A
peak pulsed currents.
Similarly, the maximum continuous source current can be
calculated as
where V
is the voltage drop across hybrid output stage
which varies over temperature and can be assumed to be
about 1.1V at T
(max) of 125C. Assuming the same param-
eters as above, this equation yields I
SOURCE
(max) of 347mA.
L
www.national.com
9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LM5111-1M | Dual 5A Compound Gate Driver |
| LM5111-1MX | Dual 5A Compound Gate Driver |
| LM5111-2M | Dual 5A Compound Gate Driver |
| LM5111-2MX | Dual 5A Compound Gate Driver |
| LM5111-3M | Dual 5A Compound Gate Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LM5111-1M | 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5111-1M/NOPB | 功能描述:功率驅(qū)動(dòng)器IC Dual 5A Compound Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5111-1MX | 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5111-1MX/NOPB | 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5111-1MY | 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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