參數(shù)資料
型號: LM5110-2M
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 外設(shè)及接口
英文描述: Dual 5A Compound Gate Driver with Negative Output Voltage Capability
中文描述: 5 A 2 CHANNEL, BUF OR INV BASED PRPHL DRVR, PDSO8
封裝: MS-012AA, SOIC-8
文件頁數(shù): 6/13頁
文件大?。?/td> 269K
代理商: LM5110-2M
Electrical Characteristics
(Continued)
T
= 40C to +125C, V
CC
= 12V, V
EE
= IN_REF = 0V, nSHDN = V
CC
, No Load on OUT_A or OUT_B, unless otherwise
specified.
Symbol
SWITCHING CHARACTERISTICS
td1
Propagation Delay Time Low to
High, IN rising (IN to OUT)
td2
Propagation Delay Time High to
Low, IN falling (IN to OUT)
t
r
Rise Time
Parameter
Conditions
Min
Typ
Max
Units
C
LOAD
= 2 nF, see
Figure
1
C
LOAD
= 2 nF, see
Figure
1
C
LOAD
= 2.0 nF, see
Figure
1
C
LOAD
= 2 nF, see
Figure
1
25
40
ns
25
40
ns
14
25
ns
t
f
Fall Time
12
25
ns
LATCHUP PROTECTION
AEC - Q100, Method 004
T
J
= 150C
500
mA
Note 1:
Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device
is intended to be functional. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Timing Waveforms
20079205
(a)
20079206
(b)
FIGURE 1. (a) Inverting, (b) Non-Inverting
L
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