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參數(shù)資料
| 型號： | LM5109SD |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | MOSFETs |
| 英文描述： | 100V / 1A Peak Half Bridge Gate Driver |
| 中文描述： | 1 A HALF BRDG BASED MOSFET DRIVER, DSO8 |
| 封裝： | 4 X 4 MM, LLP-8 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 657K |
| 代理商： | LM5109SD |
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
DD
to V
SS
HB to HS
LI or HI to V
SS
LO to V
SS
HO to V
SS
HS to V
SS
(Note 6)
HB to V
SS
Junction Temperature
-0.3V to 18V
0.3V to 18V
0.3V to V
DD
+0.3V
0.3V to V
DD
+0.3V
V
HS
0.3V to V
HB
+0.3V
5V to 100V
118V
-40C to +150C
Storage Temperature Range
ESD Rating HBM (Note 2)
55C to +150C
2 kV
Recommended Operating
Conditions
V
DD
HS (Note 6)
HB
HS Slew Rate
Junction Temperature
8V to 14V
1V to 100V
V
HS
+8V to V
HS
+14V
<
50 V/ns
40C to +125C
Electrical Characteristics
Specifications in standard typeface are for T
J
= +25C, and those in
boldface type
apply over the full
operating junction tem-
perature range
. Unless otherwise specified, V
DD
= V
HB
= 12V, V
SS
= V
HS
= 0V, No Load on LO or HO .
Symbol
Parameter
Conditions
SUPPLY CURRENTS
I
DD
V
DD
Quiescent Current
LI = HI = 0V
I
DDO
V
DD
Operating Current
f = 500 kHz
I
HB
Total HB Quiescent Current
LI = HI = 0V
I
HBO
Total HB Operating Current
f = 500 kHz
I
HBS
HB to V
SS
Current, Quiescent
V
HS
= V
HB
= 100V
I
HBSO
HB to V
SS
Current, Operating
f = 500 kHz
INPUT PINS LI and HI
V
IL
Low Level Input Voltage Threshold
V
IH
High Level Input Voltage Threshold
R
I
Input Pulldown Resistance
UNDER VOLTAGE PROTECTION
V
DDR
V
DD
Rising Threshold
V
DDR
= V
DD
- V
SS
V
DDH
V
DD
Threshold Hysteresis
V
HBR
HB Rising Threshold
V
HBR
= V
HB
- V
HS
V
HBH
HB Threshold Hysteresis
LO GATE DRIVER
V
OLL
Low-Level Output Voltage
I
LO
= 100 mA
V
OHL
= V
LO
– V
SS
V
OHL
High-Level Output Voltage
I
LO
= 100 mA,
V
OHL
= V
DD
– V
LO
I
OHL
Peak Pullup Current
V
LO
= 0V
I
OLL
Peak Pulldown Current
V
LO
= 12V
HO GATE DRIVER
V
OLH
Low-Level Output Voltage
I
HO
= 100 mA
V
OLH
= V
HO
– V
HS
V
OHH
High-Level Output Voltage
I
HO
= 100 mA
V
OHH
= V
HB
– V
HO
I
OHH
Peak Pullup Current
V
HO
= 0V
I
OLH
Peak Pulldown Current
V
HO
= 12V
THERMAL RESISTANCE
θ
JA
Junction to Ambient
SOIC-8
LLP-8 (Note 3)
Min
Typ
Max
Units
0.3
2.1
0.06
1.6
0.1
0.5
0.6
3.4
0.2
3.0
10
mA
mA
mA
mA
μA
mA
0.8
1.8
1.8
180
V
V
k
2.2
500
100
6.0
6.9
0.5
6.6
0.4
7.4
V
V
V
V
5.7
7.1
0.28
0.45
V
0.45
0.75
V
1.0
1.0
A
A
0.28
0.45
V
0.45
0.75
V
1.0
1.0
A
A
160
40
C/W
L
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