參數(shù)資料
型號(hào): LM4820IBPX-6
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類(lèi): 音頻/視頻放大
英文描述: Fixed Gain 1 Watt Audio Power Amplifier
中文描述: 1 W, 1 CHANNEL, AUDIO AMPLIFIER, PBGA8
封裝: MICRO, MO-211-BC, SMD-8
文件頁(yè)數(shù): 3/18頁(yè)
文件大?。?/td> 539K
代理商: LM4820IBPX-6
Absolute Maximum Ratings
(Note 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
Storage Temperature
Input Voltage
Power Dissipation (Note 3)
ESD Susceptibility (Note 4)
ESD Susceptibility (Note 5)
Junction Temperature
Thermal Resistance
θ
JC
(SO)
θ
JA
(SO)
6.0V
65C to +150C
0.3V to V
DD
+0.3V
Internally Limited
2500V
250V
150C
35C/W
150C/W
θ
JA
(micro SMD)
θ
JC
(MSOP)
θ
JA
(MSOP)
220C/W
56C/W
190C/W
Soldering Information
See AN-1112 ’microSMD Wafers Level Chip Scale
Package’.
Operating Ratings
Temperature Range
T
MIN
T
A
T
MAX
Supply Voltage
40C
T
A
85C
2.0V
V
DD
5.5V
Electrical Characteristics V
DD
= 5V
(Notes 1, 2, 8)
The following specifications apply for V
DD
= 5V, A
V
= 1, and 8
load unless otherwise specified. Limits apply for T
A
= 25C.
Symbol
Parameter
Conditions
LM4820-6
Units
Typical
(Note 6)
4
0.1
1
0.1
62 (f =
217Hz)
66 (f =
1kHz)
6.0
Limit
(Note 7)
10
I
DD
I
SD
P
o
THD+N
PSRR
Quiescent Power Supply Current
Shutdown Current
Output Power
Total Harmonic Distortion+Noise
Power Supply Rejection Ratio
V
IN
= 0V, I
o
= 0A
V
shutdown
= GND
THD = 2% (max); f = 1 kHz
P
o
= 0.4 Wrms; f = 1kHz
V
ripple
= 200mV sine p-p
mA (max)
μA (max)
W
%
dB
A
V
Fixed Voltage Gain
1.41V
in
rms, R
L
= 8
6.5
5.5
dB Max
dB Min
Electrical Characteristics V
DD
= 3.3V
(Notes 1, 2, 8)
The following specifications apply for V
DD
= 3.3V, A
V
= 1, and 8
load unless otherwise specified. Limits apply for T
A
= 25C.
Symbol
Parameter
Conditions
LM4820-6
Units
Typical
(Note 6)
3.5
0.1
0.4
0.1
60 (f =
217Hz)
62 (f =
1kHz)
6.0
Limit
(Note 7)
I
DD
I
SD
P
o
THD+N
PSRR
Quiescent Power Supply Current
Shutdown Current
Output Power
Total Harmonic Distortion+Noise
Power Supply Rejection Ratio
V
IN
= 0V, I
o
= 0A
V
shutdown
= GND
THD = 1% (max); f = 1kHz
P
o
= 0.15Wrms; f = 1kHz
V
ripple
= 200mV sine p-p
mA (max)
μA (max)
W
%
dB
A
V
Fixed Voltage Gain
.7V
in
rms, R
L
= 8
dB
L
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