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參數(shù)資料
| 型號： | LM4040DTB-500GT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 5 V, PDSO3 |
| 封裝： | HALOGEN FREE, BFR FREE AND ROHS COMPLIANT, TO-236, SOT-23, 3 PIN |
| 文件頁數(shù)： | 12/15頁 |
| 文件大小： | 159K |
| 代理商： | LM4040DTB-500GT3 |
LM4040, LM4041
http://onsemi.com
6
Table 5. DC ELECTRICAL CHARACTERISTICS
(IR = 100 mA, TA = 40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
Symbol
Units
Limits
Test Conditions
Parameter
Symbol
Units
Max
Typ
Min
Test Conditions
Parameter
4.096 V
VR
Reverse Breakdown Voltage
Tolerance
LM4040A
±4
±31
mV
LM4040B
±8
±35
LM4040C
±20
±47
LM4040D
±41
±80
IR_MIN
Minimum Operating Current
45
65
mA
DVR/DT
Reverse Breakdown Voltage
Temperature Coefficient
IR = 10 mA
±30
ppm/°C
IR = 1 mA
LM4040A, B, C
±20
±100
LM4040D
±20
±150
IR = 100 mA
±15
DVR/DIR
Reverse Breakdown Voltage
Change with Operating Current
IR_MIN ≤ IR ≤
1 mA
LM4040A, B, C
0.5
1.2
mV
LM4040D
0.5
1.5
1 mA ≤ IR ≤
15 mA
LM4040A, B, C
3.0
10
LM4040D
3.0
13
ZR
Reverse Dynamic Impedance
IR = 1 mA,
f = 120 Hz,
IAC = 0.1 IR
LM4040A, B
0.5
1.0
W
LM4040C
0.5
1.0
LM4040D
0.5
1.3
eN
Wideband Noise
IR = 100 mA, 10 Hz ≤ f ≤ 10 KHz
800
mVRMS
DVR
Reverse Breakdown Voltage
Long Term Stability
T = 1000 h
120
ppm
VHYST
Thermal Hysteresis (Note 2)
DT = 40°C to +125°C
0.08
%
5.000 V
VR
Reverse Breakdown Voltage
TA = +25°C
LM4040A (0.1%)
4.995
5.000
5.005
V
LM4040B (0.2%)
4.990
5.000
5.010
LM4040C (0.5%)
4.975
5.000
5.025
LM4040D (1.0%)
4.950
5.000
5.050
VR
Reverse Breakdown Voltage
Tolerance
LM4040A
±5
±38
mV
LM4040B
±10
±43
LM4040C
±25
±58
LM4040D
±50
±99
IR_MIN
Minimum Operating Current
45
65
mA
DVR/DT
Reverse Breakdown Voltage
Temperature Coefficient
IR = 10 mA
±30
ppm/°C
IR = 1 mA
LM4040A, B, C
±20
±100
LM4040D
±20
±150
IR = 100 mA
±15
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature 40°C and the 25°C measure-
ment after cycling to temperature +125°C.
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