參數(shù)資料
型號(hào): LM4040CSD-330GT3
廠商: ON SEMICONDUCTOR
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 3.3 V, PDSO5
封裝: 1.25 X 2 MM, HALOGEN FREE AND ROHS COMPLIANT, MO-203, SC-70, SC-88A, 5 PIN
文件頁(yè)數(shù): 11/15頁(yè)
文件大?。?/td> 159K
代理商: LM4040CSD-330GT3
LM4040, LM4041
http://onsemi.com
5
Table 5. DC ELECTRICAL CHARACTERISTICS
(IR = 100 mA, TA = 40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
Symbol
Units
Limits
Test Conditions
Parameter
Symbol
Units
Max
Typ
Min
Test Conditions
Parameter
3.000 V
ZR
Reverse Dynamic Impedance
IR = 1 mA,
f = 120 Hz,
IAC = 0.1 IR
LM4040A, B
0.4
0.9
W
LM4040C
0.4
0.9
LM4040D, E
0.4
1.2
eN
Wideband Noise
IR = 100 mA, 10 Hz ≤ f ≤ 10 KHz
350
mVRMS
DVR
Reverse Breakdown Voltage
Long Term Stability
T = 1000 h
120
ppm
VHYST
Thermal Hysteresis (Note 2)
DT = 40°C to +125°C
0.08
%
3.300 V
VR
Reverse Breakdown Voltage
TA = +25°C
LM4040A (0.1%)
3.297
3.300
3.303
V
LM4040B (0.2%)
3.294
3.300
3.306
VR
Reverse Breakdown Voltage
TA = +25°C
LM4040C (0.5%)
3.285
3.300
3.315
V
LM4040D (1.0%)
3.270
3.300
3.330
VR
Reverse Breakdown Voltage
Tolerance
LM4040A
±3
±22
mV
LM4040B
±6
±26
LM4040C
±15
±34
LM4040D
±30
±59
IR_MIN
Minimum Operating Current
45
65
mA
DVR/DT
Reverse Breakdown Voltage
Temperature Coefficient
IR = 10 mA
±20
ppm/°C
IR = 1 mA
LM4040A, B, C
±15
±100
LM4040D
±15
±150
IR = 100 mA
±15
DVR/DIR
Reverse Breakdown Voltage
Change with Operating Current
IR_MIN ≤ IR
1 mA
LM4040A, B, C
0.3
1.0
mV
LM4040D
0.3
1.2
1 mA ≤ IR
15 mA
LM4040A, B, C
2.5
8
LM4040D
2.5
10
ZR
Reverse Dynamic Impedance
IR = 1 mA,
f = 120 Hz,
IAC = 0.1 IR
LM4040A, B
0.3
0.8
W
LM4040C
0.3
0.9
LM4040D
0.3
1.1
eN
Wideband Noise
IR = 100 mA, 10 Hz ≤ f ≤ 10 KHz
350
mVRMS
DVR
Reverse Breakdown Voltage
Long Term Stability
T = 1000 h
120
ppm
VHYST
Thermal Hysteresis (Note 2)
DT = 40°C to +125°C
0.08
%
4.096 V
VR
Reverse Breakdown Voltage
TA = +25°C
LM4040A (0.1%)
4.092
4.096
4.100
V
LM4040B (0.2%)
4.088
4.096
4.104
LM4040C (0.5%)
4.080
4.096
4.120
LM4040D (1.0%)
4.055
4.096
4.137
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature 40°C and the 25°C measure-
ment after cycling to temperature +125°C.
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