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參數(shù)資料
| 型號(hào)： | LM3046N |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | LM3045/LM3046/LM3086 Transistor Arrays |
| 中文描述： | 5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 197K |
| 代理商： | LM3046N |
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(T
A
= 25C)
LM3046
Each
Total
Package
Units
Transistor
Power Dissipation:
T
A
= 25C
T
A
= 25C to 55C
T
A
>
55C
T
A
= 25C to 75C
T
A
>
75C
Collector to Emitter Voltage, V
CEO
Collector to Base Voltage, V
CBO
Collector to Substrate Voltage, V
CIO
(Note 2)
Emitter to Base Voltage, V
EBO
Collector Current, I
C
Operating Temperature Range
Storage Temperature Range
Soldering Information
Dual-In-Line Package Soldering (10 Sec.)
Small Outline Package
Vapor Phase (60 Seconds)
Infrared (15 Seconds)
SeeAN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount de-
vices.
Electrical Characteristics
(T
A
= 25C unless otherwise specified)
300
300
750
750
mW
mW
mW/C
mW
mW/C
V
V
V
V
mA
Derate at 6.67
15
20
20
5
50
40C to +85C
65C to +85C
260C
215C
220C
Parameter
Conditions
Limits
Typ
60
24
60
Units
Min
20
15
20
Max
Collector to Base Breakdown Voltage (V
(BR)CBO
)
Collector to Emitter Breakdown Voltage (V
(BR)CEO
)
Collector to Substrate Breakdown
Voltage (V
(BR)CIO
)
Emitter to Base Breakdown Voltage (V
(BR)EBO
)
Collector Cutoff Current (I
CBO
)
Collector Cutoff Current (I
CEO
)
Static Forward Current Transfer
Ratio (Static Beta) (h
FE
)
I
C
= 10 μA, I
E
= 0
I
C
= 1 mA, I
B
= 0
I
C
= 10 μA, I
CI
= 0
V
V
V
I
E
10 μA, I
C
= 0
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
CE
= 3V
5
7
V
nA
μA
0.002
40
0.5
I
C
= 10 mA
I
C
= 1 mA
I
C
= 10 μA
100
100
54
0.3
40
Input Offset Current for Matched
Pair Q
1
and Q
2
|I
O1
I
IO2
|
Base to Emitter Voltage (V
BE
)
V
CE
= 3V, I
C
= 1 mA
2
μA
V
CE
= 3V
I
E
= 1 mA
I
E
= 10 mA
0.715
0.800
0.45
V
Magnitude of Input Offset Voltage for
Differential Pair |V
BE1
V
BE2
|
Magnitude of Input Offset Voltage for Isolated
Transistors |V
BE3
V
BE4
|, |V
BE4
V
BE5
|,
|V
BE5
V
BE3
|
Temperature Coefficient of Base to
Emitter Voltage
V
CE
= 3V, I
C
= 1 mA
5
mV
V
CE
= 3V, I
C
= 1 mA
0.45
5
mV
V
CE
= 3V, I
C
= 1 mA
1.9
mV/C
Collector to Emitter Saturation Voltage (V
CE(SAT)
)
I
B
= 1 mA, I
C
= 10 mA
0.23
V
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