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參數(shù)資料
| 型號： | LM2479 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | 120V Triple Bias Clamp |
| 中文描述： | 120伏特三偏差夾 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 78K |
| 代理商： | LM2479 |
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage, V
CC
Input Voltage, V
IN
Storage Temperature Range, T
STG
Lead Temperature (Soldering,
<
10sec.)
+130V
0V to 5V
-65C to +150C
300C
ESD Tolerance, Machine Model
200V
Limits of Operating Ranges
(Note 3)
V
CC
V
OUT
, V
CC
= 120V
Ambient Temperature Range, T
A
110 to 125
50 to 120V
0 to 70C
DC CLAMP ELECTRICAL CHARACTERISTICS TARGETS AND LIMIT
Unless otherwise noted: V
CC
= +120V, V
IN
= 2.25V
DC
, T
A
= 25C.
Symbol
Spec Parameter
I
CC
Supply Current
All channels
V
OUT
DC Output Voltage
V
OUT-Range
Output Voltage Range
V
IN
Range = 1.0V - 4.0V
A
V
DC Voltage Gain
LE
Linearity Error
See Note 1
R
IN
Input Resistance
Conditions
Min
Typ
2.3
87
53
-18
5
24K
Max
3.5
91
Units
mA
V
DC
V
83
-16
-20
%
Note 1:
Linearity Error is the variation in DC gain from V
IN
= 1.0V to V
IN
= 4.0V.
Note 2:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Note 3:
Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and
the test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may
change when the device is not operated under the listed test conditions.
Note 4:
All voltages are measured with respect to GND, unless otherwise specified.
Test Circuit
Figure 3 shows the test circuit for evaluation of the LM2479 Clamp Amplifier. A high impedance VM (
>
100M
) is used for DC
measurements at the output.
DS101391-3
FIGURE 3. Test Circuit (One Channel)
L
www.national.com
2
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