參數(shù)資料
型號: LM2427
廠商: National Semiconductor Corporation
英文描述: Triple 80 MHz CRT Driver
中文描述: 三80兆赫CRT顯示器驅動
文件頁數(shù): 2/6頁
文件大?。?/td> 117K
代理商: LM2427
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage, V
a
Safe Operating Power Consumption
a
85V
14W
Storage Temperature Range, T
STG
Operating Temperature Range, T
CASE
Lead Temperature (Soldering, 10 sec.)
b
25
§
C to
a
100
§
C
b
20
§
C to
a
90
§
C
300
§
C
TBD
ESD Tolerance
Electrical Characteristics
V
a e
80V, R
G
e
430
X
, C1
e
47 pF, C
L
e
8 pF, 50 V
PP
output swing with 40V DC
offset. SeeFigure 1. T
CASE
e
25
§
C unless otherwise noted.
Symbol
Parameter
Conditions
LM2427
Units
Min
Typical
Max
I
CC
Supply Current (per Amplifier)
No Input or Output Load
24
30
mA
V
INDC
Input Offset Voltage
1.4
1.6
1.8
V
V
OUTDC
Output Offset Voltage
34
40
46
V
t
R
Rise Time
10% to 90% (Note 1)
3.5
ns
t
F
Fall Time
90% to 10% (Note 1)
3.5
ns
A
V
Voltage Gain
b
11
b
13
b
14
V/V
LE
Linearity Error
V
OUT
from
a
10V to
a
70V (Note 2)
5
%
D
A
V
Gain Matching
(Note 3)
0.2
dB
Note 1:
Input signal: t
r
, t
f
k
1.5 ns, f
in
e
1 MHz.
Note 2:
Linearity error is defined as: The variation in small signal gain from
a
20V to
a
70V output with a 100 mVAC, 1 MHz, input signal.
Note 3:
Calculated value from voltage gain test on each channel.
Typical Performance Characteristics
Typical Test Circuit (One Section)
TL/H/11967–3
Note:
C
L
, total load capacltance, includes all parasitic capacitances.
FIGURE 1. Test Circuit (One Section)
This test circuit is used for both characteristic plots.
Typical Rise Time vs Capacitive Loading
TL/H/11967–10
Typical Fall Time vs Capacitive Loading
TL/H/11967–5
2
相關PDF資料
PDF描述
LM2427T Triple 80 MHz CRT Driver
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