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參數(shù)資料
| 型號： | LM194 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | LM194/LM394 Supermatch Pair |
| 中文描述： | LM194/LM394的Supermatch配對 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 221K |
| 代理商： | LM194 |
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
(Note 4)
Collector Current
20 mA
Collector-Emitter Voltage
V
MAX
35V
20V
Collector-Emitter Voltage
LM394C
Collector-Base Voltage
LM394C
35V
20V
Collector-Substrate Voltage
LM394C
35V
20V
Collector-Collector Voltage
LM394C
35V
20V
Base-Emitter Current
g
10 mA
500 mW
Power Dissipation
Junction Temperature
LM194
LM394/LM394B/LM394C
b
55
§
C to
a
125
§
C
b
25
§
C to
a
85
§
C
b
65
§
C to
a
150
§
C
Storage Temperature Range
Soldering Information
Metal Can Package (10 sec.)
Dual-In-Line Package (10 sec.)
Small Outline Package
Vapor Phase (60 sec.)
Infrared (15 sec.)
260
§
C
260
§
C
215
§
C
220
§
C
See AN-450 ‘‘Surface Mounting and their Effects on Prod-
uct Reliability’’ for other methods of soldering surface
mount devices.
Electrical Characteristics
(T
J
e
25
§
C)
Parameter
Conditions
LM194
LM394
LM394B/394C
Units
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Current Gain (h
FE
)
V
CB
e
0V to V
MAX
(Note 1)
I
C
e
1 mA
I
C
e
100
m
A
I
C
e
10
m
A
I
C
e
1
m
A
350
350
300
200
700
550
450
300
300
250
200
150
700
550
450
300
225
200
150
100
500
400
300
200
Current Gain Match,
(h
FE
Match)
e
100
[
D
I
B
] [
h
FE(MIN)
]
V
CB
e
0V to V
MAX
I
C
e
10
m
A to 1 mA
I
C
e
1
m
A
0.5
1.0
2
0.5
1.0
4
1.0
2.0
5
%
%
I
C
Emitter-Base Offset
Voltage
V
CB
e
0
I
C
e
1
m
A to 1 mA
25
100
25
150
50
200
m
V
Change in Emitter-Base
Offset Voltage vs
Collector-Base Voltage
(CMRR)
(Note 1)
I
C
e
1
m
A to 1 mA,
V
CB
e
0V to V
MAX
10
25
10
50
10
100
m
V
Change in Emitter-Base
Offset Voltage vs
Collector Current
V
CB
e
0V,
I
C
e
1
m
A to 0.3 mA
5
25
5
50
5
50
m
V
Emitter-Base Offset
Voltage Temperature
Drift
I
C
e
10
m
A to 1 mA (Note 2)
I
C1
e
I
C2
V
OS
Trimmed to 0 at 25
§
C
0.08
0.3
0.08
1.0
0.2
1.5
m
V/
§
C
0.03
0.1
0.03
0.3
0.03
0.5
m
V/
§
C
Logging Conformity
I
C
e
3 nA to 300
m
A,
V
CB
e
0, (Note 3)
150
150
150
m
V
Collector-Base Leakage
V
CB
e
V
MAX
0.05
0.25
0.05
0.5
0.05
0.5
nA
Collector-Collector
Leakage
V
CC
e
V
MAX
0.1
2.0
0.1
5.0
0.1
5.0
nA
Input Voltage Noise
I
C
e
100
m
A, V
CB
e
0V,
f
e
100 Hz to 100 kHz
1.8
1.8
1.8
nV/
0
Hz
Collector to Emitter
Saturation Voltage
I
C
e
1 mA, I
B
e
10
m
A
I
C
e
1 mA, I
B
e
100
m
A
0.2
0.1
0.2
0.1
0.2
0.1
V
V
Note 1:
Collector-base voltage is swept from 0 to V
MAX
at a collector current of 1
m
A, 10
m
A, 100
m
A, and 1 mA.
Note 2:
Offset voltage drift with V
OS
e
0 at T
A
e
25
§
C is valid only when the ratio of I
C1
to I
C2
is adjusted to give the initial zero offset. This ratio must be held to
within 0.003% over the entire temperature range. Measurements taken at
a
25
§
C and temperature extremes.
Note 3:
Logging conformity is measured by computing the best fit to a true exponential and expressing the error as a base-emitter voltage deviation.
Note 4:
Refer to RETS194X drawing of military LM194H version for specifications.
2
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