參數(shù)資料
型號(hào)： LM1893
廠商： National Semiconductor Corporation
英文描述： LM1893/LM2893 Carrier-Current Transceiver
中文描述： LM1893/LM2893載波電流收發(fā)器
文件頁(yè)數(shù)： 2/24頁(yè)
文件大小： 576K
代理商： LM1893
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply voltage
Voltage on pin 12
Voltage on pin 10 (Note 1)
Voltage on pins 5 and 17
5.6 V DC zener current
Junction temperature:
30 V
55 V
41 V
40 V
100 mA
150
§
C
125
§
C
1KV
transmit mode
receive mode
Electro-Static Discharge (120 pF, 1500
X
)
Maximum continuous dissipation, T
A
e
25
§
C,
plastic DIP N (Note 2): transmit mode
1.66 W
1.33 W
receive mode
Operating ambient temp. range
Storage temperature range
Lead temp., soldering, 7 seconds
Note: Absolute maximum ratings indicate limits beyond
which damage to the device may occur. Electrical specifica-
tions are not ensured when operating the device above
guaranteed limits but below absolute maximum limits, but
there will be no device degradation.
b
40 to 85
§
C
b
65 to 150
§
C
260
§
C
General Electrical Characteristics
(Note 3). The test conditions are: V
a
e
18V and F
O
e
125 kHz, unless otherwise noted.
Test
Limit
(Note 4)
Design
Limit
(Note 5)
Limit
Units
Y
Parameter
Conditions
Typical
1
5.6 V Zener voltage, V
Z
Pin 11, I
Z
e
2 mA
5.6
5.2
5.9
V min.
V max.
2
5.6 V Zener resistance, R
Z
Pin 11, R
Z
e
(V
Z
@
10 mA
b
V
Z
@
1 mA)/(10 mA
b
1 mA)
5
X
3
Carrier I/O peak survivable
transient voltage, V
OT
Pin 10, discharge 1
m
F cap. charged to V
OT
thru
k
1
X
80
60
V max.
4
Carrier I/O clamp voltage, V
OC
Pin 10, I
OC
e
10 mA, RX mode
2N2222 diode pin 8 to 9
Pin 10, I
OC
e
10 mA
44
41
50
V min.
V max.
5
Carrier I/O clamp resistance, R
10
20
X
6
TX/RX low input voltage, V
IL
Pin 5
1.8
0.8
V max.
7
TX/RX high input voltage, V
IH
Pin 5 (Note 9)
2.2
2.8
V min.
8
TX/RX low input current, I
IL
Pin 5 at 0.8 V
b
2
b
20
1
m
A min.
m
A max.
9
TX/RX high input current, I
IH
Pin 5 at 40 V
b
1
10
0
m
A min.
m
A max.
10
b
4
10
RX
b
TX switch-over time, T
RT
TX
b
RX switch-over time, T
TR
Time to develop 63% of full current drive thru pin 10
10
m
s
11
1 bit time, T
B
e
1/(2F
DATA
). Time T
TR
is user
controlled with C
M
, see Apps. Info.
TX mode, R
O
e
6.65 k
X
, C
O
e
560 pF
F
0
e
(F
1
a
F
2
)/2
TX or RX mode, (F
OMAX
b
F
OMIN
)/(T
JMAX
b
T
JMIN
)
TX or RX mode,
b
40
s
T
J
s
T
JMAX
2
bit
12
ICO initial accuracy of F
O
125
113
137
kHz min.
kHz max.
PPM/
§
C
13
ICO temperature coefficient of F
O
b
100
14
Temperature drift of F
O
g
2.0
g
5.0
% max.
Transmitter Electrical Characteristics
(Note 3). The test conditions are: V
a
e
18 V and F
O
e
125 kHz
unless otherwise noted. The transmit center frequency is F
O
, FSK low is F
1
, and FSK high is F
2
.
Test
Limit
(Note 4)
Design
Limit
(Note 5)
Limit
Units
Y
Parameter
Conditions
Typical
15
Supply voltage, V
a
, range
Meets test 17 spec. at T
J
e
25
§
C and:
l
(F
1
14V
b
F
1
18V
)/F
1
[
18V
]
l
k
0.01
l
(F
1
[
24V
]
b
F
1
[
18V
]
)/F
1
[
18V
]
l
k
0.01
Pin 15. Pin 12 high. I
QT
is I
Q
through
pin 15 and the average current I
ODC
of the
Carrier I/O through pin 10
13
40
14
24
15
23
V min.
V max.
16
Total supply current, I
QT
52
79
mA max.
17
Carrier I/O output current, I
O
100
X
load on pin 10
70
45
mApp min.
18
Carrier I/O lower swing limit, V
ALC
Pin 10. Set internally be ALC.
2N2222 diode pin 8 to 9
4.7
4.0
5.7
V min.
V max.
19
THD of I
O
(Note 6)
Q of 10 tank driving 10
X
line
100
X
load, no tank
(F
2
b
F
1
)/(
[
F
2
a
F
1
]
/2)
0.6
5.5
5.0
9
% max.
% max.
20
FSK deviation, F
2
b
F
1
4.4
3.7
5.2
% min.
% max.
21
Data In. low input voltage, V
IL
Data In. high input voltage, V
IH
Data In. low input current, I
IL
Pin 17
1.7
0.8
V max.
22
Pin 17 (Note 9)
2.1
2.8
V min.
23
Pin 17 at 0.8 V
b
1
b
10
1
m
A min.
m
A max.
24
Data In. high input current, I
IH
Pin 17 at 40 V
b
1
10
0
m
A min.
m
A max.
10
b
4
2
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