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參數(shù)資料
| 型號： | LM1863M |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 接收器 |
| 英文描述： | AM Radio System for Electronically Tuned Radios |
| 中文描述： | AM, AUDIO SINGLE CHIP RECEIVER, PDSO20 |
| 封裝： | PLASTIC, SOP-20 |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 268K |
| 代理商： | LM1863M |
Absolute Maximum Ratings
Supply Voltage
16V
Package Dissipation (Note 1)
1.7W
Storage Temperature Range
b
55
§
C to
a
150
§
C
Operating Temperature Range
0
§
C to
a
70
§
C
Soldering Information
Small Outline Package
Vapor Phase (60 sec)
Infrared (15 sec)
215
§
C
220
§
C
See AN-450 ‘‘Surface Mounting Methods and Their Effect
on Product Reliability’’ for other methods of soldering sur-
face mount devices.
Electrical Characteristics
(Test Circuit, T
A
e
25
§
C, V
a e
12V, SW1
e
Position 1, SW2
e
Position 2, unless indicated otherwise)
Parameter
Conditions
Min
Typ
Max
Units
STATIC CHARACTERISTICS
Supply Current
V
IN
e
0 mV
8.3
12.5
mA
Pin 16, Regulator Voltage
5.6
V
Operating Voltage Range
(See Note 2)
7
16
V
Pin 3 Leakage Current
V
IN
e
0 mV
0.1
m
A
Pin 9, Low Output Voltage
V
IN
e
0 mV, SW2
e
Position 1
.15
V
Pin 17, Output Voltage
V
IN
e
0 mV
0
V
DYNAMIC CHARACTERISTICS: (f
MOD
e
1 kHz, f
IN
e
1 MHz, M
e
0.3)
Maximum Sensitivity
V
IN
For V
AUDIO
e
6 mVrms
7.5
m
V
20 dB Quieting Sensitivity
V
IN
for 20 dB S/N in Audio
15
30
m
V
Maximum Signal to Noise Ratio
V
IN
e
10 mV
40
54
dB
Total Harmonic Distortion
V
IN
e
10 mV
.26
%
Total Harmonic Distortion
V
IN
e
10 mV, M
e
0.8
.63
2
%
Audio Output Level
V
IN
e
10 mV
80
120
160
mVrms
Overload Distortion
V
IN
e
50 mV, M
e
0.8
7.5
%
Meter Output Voltage
V
IN
e
100
m
V
0.5
V
Meter Output Voltage
V
IN
e
10 mV
4.6
V
Local Oscillator Output Level
on Pin 19
(See Note 3), SW1
e
Position 1
100
147
mVrms
Local Oscillator Output Level
on Pin 19
(See Note 3), SW1
e
Position 2
125
mVrms
Stop Detector Valid Station
Frequency Window
V
IN
e
10 mV, difference between
the two frequencies at which
Pin 9
k
1V, SW2
e
Position 1
2.5
4
5.5
kHz
Stop Detector Valid Station
Signal Level Threshold
Find V
IN
for which Pin 9
l
1V,
SW2
e
Position 1
8
16
70
m
Vrms
RF AGC Threshold
Find V
IN
that produces
10
m
A of current into Pin 3
3
6
10
mVrms
Pin 3 Low Output Level
V
IN
e
30 mV
0.1
V
Pin 9 Leakage Current
V
IN
e
30 mV
0.1
m
A
Pin 17 Output Resistance
V
IN
e
10 mV
825
X
Note 1:
Above T
A
e
25
§
C derate based on T
j (MAX)
e
150
§
C and
i
jA
e
85
§
C/W.
Note 2:
All data sheet specifications are for V
a e
12V and may change slightly with supply.
Note 3:
The local oscillator level at Pin 19 is identical to the level at Pin 18 since Pin 19 is an emitter follower off of Pin 18.
2
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