參數(shù)資料
型號: LM1815N
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 模擬信號調(diào)理
英文描述: Adaptive Variable Reluctance Sensor Amplifier
中文描述: SPECIALTY ANALOG CIRCUIT, PDIP14
封裝: PLASTIC, DIP-14
文件頁數(shù): 2/6頁
文件大?。?/td> 133K
代理商: LM1815N
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage
12V
Power Dissipation (Note 1)
1250 mW
Operating Temperature Range
b
40
§
C to
a
125
§
C
Storage Temperature Range
b
65
§
C to
a
150
§
C
Junction Temperature (Note 2)
a
125
§
C
g
30 mA
260
§
C
Input Current
Lead Temperature (Soldering, 10 sec.)
Electrical Characteristics
(T
A
e
25
§
C, V
CC
e
10V, unless otherwise specified, seeFigure 1 )
Parameter
Conditions
Min
Typ
Max
Units
Operating Supply Voltage
2.5
10
12
V
Supply Current
f
IN
e
500 Hz, Pin 9
e
2V,
Pin 11
e
0.8V
3.6
6
mA
Reference Pulse Width
f
IN
e
1 Hz to 2 kHz
70
100
130
m
s
Input Bias Current
V
IN
e
2V, (Pin 9 and Pin 11)
5
m
A
Input Bias Current
V
IN
e
0V dc, (Pin 3)
200
nA
Input Impedance
V
IN
e
5 Vrms, (Note 3)
12
20
28
k
X
Zero Crossing Threshold
V
IN
e
100 mVp-p, (Pin 3)
25
mV
Logic Threshold
(Pin 9 and Pin 11)
0.8
1.1
2.0
V
V
OUT
High
R
L
e
1 k
X
, (Pin 10)
7.5
8.6
V
V
OUT
Low
I
SINK
e
0.1 mA, (Pin 10)
0.3
0.4
V
Input Arming Threshold
Pin 5 Open, V
IN
s
135 mVp-p
30
45
60
mV
Pin 5 Open, V
IN
t
230 mVp-p
Pin 5 to V
a
40
80
90
% of V
3
Pk
200
mV
Pin 5 to Gnd
b
25
25
mV
Output Leakage Pin 12
V
12
e
11V
0.01
10
m
A
Saturation Voltage P12
I
12
e
2 mA
0.2
0.4
V
Note 1:
For operation at elevated temperatures, the device must be derated based on a 125
§
C maximum junction temperature and a thermal resistance of 80
§
C/W
(DIP), 120
§
C/W (SO-14) junction to ambient.
Note 2:
Temporary excursions to 150
§
C can be tolerated.
Note 3:
Measured at input to external 18 k
X
resistor. IC contains 1 k
X
in series with a diode to attenuate the input signal.
TL/H/7893–2
FIGURE 1. LM1815 Adaptive Sense Amplifier
2
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