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參數(shù)資料
| 型號： | LM1771USDX |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | Low-Voltage Synchronous Buck Controller with Precision Enable and No External Compensation |
| 中文描述： | SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, DSO6 |
| 封裝： | 3 X 3 MM, LLP-6 |
| 文件頁數(shù)： | 3/18頁 |
| 文件大?。?/td> | 776K |
| 代理商： | LM1771USDX |
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
IN
EN, FB, HG, LG
Storage Temperature Range
-0.3V to 6V
-0.3V to V
IN
65C to 150C
Junction Temperature
Lead Temperature
ESD Rating
150C
260C
2kV
(soldering, 10sec)
Operating Ratings
V
IN
to GND
Junction Temperature Range (T
J
)
2.8V to 5.5V
40C to +125C
Electrical Characteristics
type
apply over the full Junction Temperature Range (40C to +125C). Minimum and Maximum limits are guaranteed
through test, design or statistical correlation. Typical values represent the most likely parametric norm at T
J
= 25C and are
provided for reference purposes only. Unless otherwise specified V
IN
= 3.3V.
Specifications with standard typeface are for T
J
= 25C, and those in
bold face
Symbol
V
FB
I
Q
Parameter
Conditions
Min
0.782
Typ
0.8
400
0.5
1.0
2.0
150
135
120
70
1.2
50
50
2.65
50
0.55
Max
0.818
700
0.6
1.2
2.4
250
225
220
Unit
V
μA
Feedback pin voltage
Quiescent current
V
FB
= 0.9V
LM1771S - (500ns)
LM1771T - (1000ns)
LM1771U - (2000ns)
LM1771S - (500ns)
LM1771T - (1000ns)
LM1771U - (2000ns)
T
ON
Switch On-Time
0.4
0.8
1.6
μs
T
OFF_MIN
Minimum Off-Time
ns
T
D
Gate Drive Dead-Time
EN Pin Rising Threshold
EN Pin Hysteresis
Feedback pin bias current
Under-voltage lock out
Under-voltage lock out hysteresis
Feedback pin Short Circuit Latch
Threshold
HG FET driver pull-up On resistance
HG FET driver pull-down On resistance I
HG
= 20 mA
LG FET driver pull-up On resistance
LG FET driver pull-down On resistance
ns
V
mV
nA
V
mV
V
V
IH_EN
V
EN_HYS
I
FB
V
UVLO
V
UVLO_HYS
V
SC_TH
1.15
1.25
200
V
FB
= 0.9V
V
IN
Rising Edge
2.8
0.42
0.65
R
DS(ON) 1
R
DS(ON) 2
R
DS(ON) 3
R
DS(ON) 4
I
HG
= 20 mA
4
6
4
6
I
LG
= 20 mA
I
LG
= 20 mA
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications, see Electrical Characteristics.
L
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