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參數(shù)資料
| 型號： | LM160 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | High Speed Differential Comparator |
| 中文描述： | 高速差分比較器 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 230K |
| 代理商： | LM160 |
Absolute Maximum Ratings
(Notes 6, 8)
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Positive Supply Voltage
Negative Supply Voltage
Peak Output Current
Differential Input Voltage
Input Voltage
ESD Tolerance (Note 9)
Operating Temperature Range
LM160
LM360
+8V
8V
20 mA
±
5V
V
+
≥
V
IN
≥
V
1600V
55C to +125C
0C to +70C
Storage Temperature Range
Lead Temperature
(Soldering, 10 sec.)
Soldering Information
Dual-In-Line Package
Soldering (10 seconds)
Small Outline Package
Vapor Phase (60 seconds)
Infrared (15 seconds)
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
65C to +150C
260C
260C
215C
220C
Electrical Characteristics
(T
MIN
≤
T
A
≤
T
MAX
)
Parameter
Operating Conditions
Supply Voltage V
CC+
Supply Voltage V
CC
Input Offset Voltage
Input Offset Current
Input Bias Current
Output Resistance (Either Output)
Response Time
Conditions
Min
Typ
Max
Units
4.5
4.5
5
6.5
6.5
5
3
20
V
V
5
2
0.5
5
100
13
12
14
R
S
≤
200
mV
μA
μA
ns
ns
ns
V
OUT
= V
OH
T
A
= 25C, V
S
=
±
5V (Notes 2, 7)
T
A
= 25C, V
S
=
±
5V (Notes 3, 7)
T
A
= 25C, V
S
=
±
5V (Notes 4, 7)
25
20
Response Time Difference between Outputs
(t
pd
of +V
IN1
) (t
pd
of V
IN2
)
(t
pd
of +V
IN2
) (t
pd
of V
IN1
)
(t
pd
of +V
IN1
) (t
pd
of +V
IN2
)
(t
pd
of V
IN1
) (t
pd
of V
IN2
)
Input Resistance
Input Capacitance
Average Temperature Coefficient of
Input Offset Voltage
Average Temperature Coefficient of
Input Offset Current
Common Mode Input Voltage Range
Differential Input Voltage Range
Output High Voltage (Either Output)
Output Low Voltage (Either Output)
Positive Supply Current
Negative Supply Current
T
A
= 25C (Notes 2, 7)
T
A
= 25C (Notes 2, 7)
T
A
= 25C (Notes 2, 7)
T
A
= 25C (Notes 2, 7)
f = 1 MHz
f = 1 MHz
R
S
= 50
2
2
2
2
17
3
8
ns
ns
ns
ns
k
pF
μV/C
7
nA/C
V
S
=
±
6.5V
±
4
±
5
2.4
±
4.5
V
V
V
V
I
OUT
= 320 μA, V
S
=
±
4.5V
I
SINK
= 6.4 mA
V
S
=
±
6.5V
V
S
=
±
6.5V
3
0.25
18
9
0.4
32
16
mA
mA
Note 2:
Response time measured from the 50% point of a 30 mVp-p 10 MHz sinusoidal input to the 50% point of the output.
Note 3:
Response time measured from the 50% point of a 2 Vp-p 10 MHz sinusoidal input to the 50% point of the output.
Note 4:
Response time measured from the start of a 100 mV input step with 5 mV overdrive to the time when the output crosses the logic threshold.
Note 5:
Typical thermal impedances are as follows:
Cavity DIP (J):
θ
jA
θ
jA
135C/W
Header (H)
θ
jA
165C/W
(Still Air)
Molded DIP (N):
130C/W
67C/W
(400 LF/min Air Flow)
θ
jC
25C/W
Note 6:
The device may be damaged if used beyond the maximum ratings.
Note 7:
Measurements are made in AC Test Circuit, Fanout = 1
Note 8:
Refer to RETS 160X for LM160H, LM160J-14 and LM160J military specifications.
www.national.com
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