參數(shù)資料
型號(hào)： LM119W-SMD
廠商： NATIONAL SEMICONDUCTOR CORP
元件分類： 運(yùn)動(dòng)控制電子
英文描述： HIGH SPEED DUAL COMPARATOR
中文描述： DUAL COMPARATOR, 3800 uV OFFSET-MAX, 80 ns RESPONSE TIME, CDSO10
封裝： CERPACK-10
文件頁(yè)數(shù)： 6/18頁(yè)
文件大?。?/td> 366K
代理商： LM119W-SMD
MDLM119-X REV 2A2
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS:(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC:
Vcm = 0V
SYMBOL
PARAMETER
CONDITIONS
NOTES
PIN-
NAME
MIN
MAX
UNIT
SUB-
GROUPS
Vsat
Output Saturation
Voltage
Vcc = +15V, Iout = 25mA, Vin < -5mV
1
1.5
V
1, 2,
3
+Vcc = 3.5V, -Vcc = -1V, Vin < -6mV,
Isink < 3.2mA
0.4
V
1, 2
0.6
V
3
Av
Voltage Gain
+Vcc = +15V, Delta Vout = 12V
4
10.5
K
4
4
10
K
5, 6
Vcc = 5V, Delta Vout = 4.5V
2, 4
8
K
4
2, 4
5
K
5
2, 4
5.8
K
6
CMRR
Common Mode
Rejection Ratio
+Vcc = +15V, Vcm = +12V
80
dB
4
DC PARAMETERS: DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC:
Vcm = 0V. Delta calculations performed on JAN S and QMLV devices at group B, subgroup 5 ONLY.
Icc+
Positive Supply
Current
+Vcc = +15V
-1
1
mA
1
Icc-
Negative Supply
Current
+Vcc = +15V
-0.5
0.5
mA
1
Vio
Input Offset
Voltage
Vcc = 5V, Vcm = 1V, Rs < 5K
-0.4
0.4
mV
1
Note 1:
Vin > 8mV at extremes for Ileak and Vin < -8mV at extremes for Vsat (Vin to exceed
Vos).
5 Volt differential across +Vcc and -Vcc.
Parameter guaranteed by Vio and Iio tests.
K = V/mV.
Note 2:
Note 3:
Note 4:
6
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