參數(shù)資料
型號(hào)： LIS2L06AL
廠商： 意法半導(dǎo)體
英文描述： MEMS INERTIAL SENSOR: 2-axis - +/- 2g/6g ULTRACOMPACT LINEAR ACCELEROMETER
中文描述： MEMS慣性傳感器：2軸- / - 2g/6g超小型線性加速度計(jì)
文件頁(yè)數(shù)： 7/17頁(yè)
文件大?。?/td> 181K
代理商： LIS2L06AL
LIS2L06AL
2 Mechanical and Electrical Specifications
CD00068417
7/17
2.3
Absolute maximum ratings
Stresses above those listed as “absolute maximum ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device under these
conditions is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
Table 4.
Absolute maximum ratings
2.4
Terminology
Sensitivity
describes the gain of the sensor and can be determined by applying 1g
acceleration to it. As the sensor can measure DC accelerations this can be done easily by
pointing the axis of interest towards the center of the earth, note the output value, rotate the
sensor by 180 degrees (point to the sky) and note the output value again thus applying ±1g
acceleration to the sensor. Subtracting the larger output value from the smaller one and dividing
the result by 2 will give the actual sensitivity of the sensor. This value changes very little over
temperature (see sensitivity change vs. temperature) and also very little over time. The
Sensitivity Tolerance describes the range of Sensitivities of a large population of sensors.
Zero-g level
describes the actual output signal if there is no acceleration present. A sensor in a
steady state on a horizontal surface will measure 0g in X axis and 0g in Y axis. The output is
ideally for a 3.3V powered sensor Vdd/2 = 1650mV. A deviation from ideal 0-g level (1650mV in
this case) is called Zero-g offset. Offset of precise MEMS sensors is to some extend a result of
stress to the sensor and therefore the offset can slightly change after mounting the sensor onto
a printed circuit board or exposing it to extensive mechanical stress. Offset changes little over
temperature - see “Zero-g level change vs. temperature” - the Zero-g level of an individual
sensor is very stable over lifetime. The Zero-g level tolerance describes the range of Zero-g
levels of a population of sensors.
Symbol
Ratings
Maximum Value
Unit
Vdd
Supply voltage
-0.3 to 7
V
Vin
Input Voltage on Any Control pin (ST, FS)
-0.3 to Vdd +0.3
V
A
POW
Acceleration (Any axis, Powered, Vdd=3.3V)
3000g for 0.5 ms
10000g for 0.1 ms
A
UNP
Acceleration (Any axis, Not powered)
3000g for 0.5 ms
10000g for 0.1 ms
T
STG
Storage Temperature Range
-40 to +125
°C
ESD
Electrostatic Discharge Protection
2kV HBM
200V MM
1500V CDM
This is a Mechanical Shock sensitive device, improper handling can cause
permanent damages to the part
This is an ESD sensitive device, improper handling can cause permanent damages
to the part
相關(guān)PDF資料
PDF描述
LIS2L06ALTR MEMS INERTIAL SENSOR: 2-axis - +/- 2g/6g ULTRACOMPACT LINEAR ACCELEROMETER
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LIS302ALKTR MEMS motion sensor 3-axis-【2g analog output "piccolo" accelerometer
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LIS2L06AL_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:MEMS INERTIAL SENSOR:2-axis - +/- 2g/6g ultracompact linear accelerometer
LIS2L06ALTR 功能描述:加速計(jì) - 板上安裝 MEMS INERTIAL snsr 2 axis RoHS:否 制造商:Murata 傳感軸:Double 加速:12 g 靈敏度: 封裝 / 箱體: 輸出類型:Analog 數(shù)字輸出 - 位數(shù):11 bit 電源電壓-最大:5.25 V 電源電壓-最小:4.75 V 電源電流:4 mA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C
LIS2MDLTR 功能描述:ULTRA-COMPACT HIGH-PERFORMANCE E 制造商:stmicroelectronics 系列:- 零件狀態(tài):在售 類型:羅盤/磁力計(jì) 技術(shù):磁阻 軸:X，Y，Z 輸出類型:I2C，SPI 電壓 - 電源:1.71 V ~ 3.6 V 分辨率:16 b 帶寬:5Hz ~ 50Hz 工作溫度:-40°C ~ 85°C（TA） 特性:可選數(shù)值范圍 封裝/外殼:12-VFLGA 供應(yīng)商器件封裝:12-LGA（2x2） 標(biāo)準(zhǔn)包裝:1
LIS302ALB 功能描述:加速計(jì) - 板上安裝 MEMS motion snsr 3 axis RoHS:否 制造商:Murata 傳感軸:Double 加速:12 g 靈敏度: 封裝 / 箱體: 輸出類型:Analog 數(shù)字輸出 - 位數(shù):11 bit 電源電壓-最大:5.25 V 電源電壓-最小:4.75 V 電源電流:4 mA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C
LIS302ALBTR 功能描述:加速計(jì) - 板上安裝 MEMS Motion Sensor RoHS:否 制造商:Murata 傳感軸:Double 加速:12 g 靈敏度: 封裝 / 箱體: 輸出類型:Analog 數(shù)字輸出 - 位數(shù):11 bit 電源電壓-最大:5.25 V 電源電壓-最小:4.75 V 電源電流:4 mA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C
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