
AC CHARACTERISTICS
(1) READ CYCLE (T
A
= -30 to +60
°
C, V
CC
= 3.0 to 3.6 V)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
Read cycle
Address access time
t
RC
t
AA
t
ACE1
t
ACE2
t
OE
t
OH
t
LZ1
t
LZ2
t
OLZ
t
HZ1
t
HZ2
t
OHZ
200
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
200
200
200
150
Chip enable
access time
(CE
1
)
(CE
2
)
Output enable access time
Output hold time
10
20
20
10
0
0
0
Chip enable to
output in Low-Z
(CE
1
)
(CE
2
)
Output enable to output in Low-Z
Chip enable to
output in High-Z
(CE
1
)
(CE
2
)
60
60
40
Output disable to output in High-Z
(2) WRITE CYCLE (T
A
= -30 to +60
°
C, V
CC
= 3.0 to 3.6 V)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
Write cycle time
Chip enable to end of write
Address valid to end of write
Address setup time
Write pulse width
Write recovery time
Data valid to end of write
Data hold time
Output active from end of write
WE to output in High-Z
OE to output in High-Z
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR
t
DW
t
DH
t
OW
t
WZ
t
OHZ
200
180
180
0
150
0
100
0
20
0
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
60
40
AC TEST CONDITIONS
PARAMETER
MODE
Input voltage amplitude
Input rise/fall time
Timing reference level
Output load conditions
0 to V
CC
10 ns
1.5 V
No load
CAPACITANCE (T
A
= 25
°
C, f = 1 MHz)
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Input capacitance
Input/output capacitance
C
IN
C
I/O
V
IN
= 0 V
V
I/O
= 0 V
7
pF
pF
10
NOTE:
This parameter is sampled and not production tested.
LH5164AZ8
CMOS 64K (8K
×
8) Static RAM
4