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參數(shù)資料
| 型號(hào)： | LH5116H |
| 廠商： | Sharp Corporation |
| 英文描述： | CMOS 16K (2K x 8) Static RAM |
| 中文描述： | 的CMOS 16K的（2K × 8）靜態(tài)RAM |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 87K |
| 代理商： | LH5116H |
(2) WRITE CYCLE
1
(V
CC
= 5 V
±
10%)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
NOTE
Write cycle time
Chip enable to end of write
Address valid time
Address setup time
Write pulse width
Write recovery time
Output active from end of write
WE Low to output in High-Z
Data valid to end of write
Data hold time
Output enable to output in High-Z
Output active from end of write
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR
t
OW
t
WHZ
t
DW
t
DH
t
OHZ
t
OW
100
80
80
0
60
10
10
0
30
10
0
10
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2
2
30
40
2
2
NOTES:
1.
T
A
= 0 to +70
°
C (LH5116/D/NA), T
A
= -40 to +85
°
C (LH5116H/HD/HN)
2.
Active output to high-impedance and high-impedance to output active tests specified for a
±
200 mV transition
from steady state levels into the test load.
AC TEST CONDITIONS
PARAMETER
MODE
NOTE
Input voltage amplitude
Input rise/fall time
Timing reference level
Output load condition
0.8 V to 2.2 V
10 ns
1.5 V
1TTL + C
L
(100 pF)
1
NOTE:
1.
Includes scope and jig capacitance.
DATA RETENTION CHARACTERISTICS
1
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNIT
NOTE
Data retention voltage
V
CCDR
CE
≥
V
CCRC
- 0.2 V
CE
≥
V
CCDR
- 0.2 V,
V
CCDR
= 2.0 V
2.0
5.5
1.0
0.2
V
Data retention current
I
CCDR
μ
A
2
Chip disable to data
retention
Recovery time
t
CDR
0
t
R
t
RC
ns
3
NOTES:
1.
T
A
= 0 to +70
°
C (LH5116/D/NA), T
A
= -40 to +85
°
C (LH5116H/HD/HN)
2.
T
A
= 25
°
C
3.
t
RC
= Read cycle time
CAPACITANCE
1
(f = 1 MHz, T
A
= 25
°
C)
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Input capacitance
Input/output capacitance
C
IN
C
I/O
V
IN
= 0 V
V
I/O
= 0 V
7
10
pF
pF
NOTE:
1.
This parameter is sampled and not production tested.
LH5116/H
CMOS 16K (2K
×
8) Static RAM
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH5116N-10 | CMOS 16K (2K x 8) Static RAM |
| LH5116S | CMOS 16K (2K x 8) Static RAM |
| LH51256L | CMOS 256K (32K X 8) STATIC RAM |
| LH51256 | CMOS 256K (32K X 8) STATIC RAM |
| LH5164AT-80L | CMOS 64K (8K x8) Static RAM(CMOS 64K (8K x8) 靜態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH5116H-10 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:CMOS 16K (2K x 8) Static RAM |
| LH5116HD-10 | 制造商:Sharp Microelectronics Corporation 功能描述:2K X 8 STANDARD SRAM, 100 ns, PDIP24 |
| LH5116HN-10 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:CMOS 16K (2K x 8) Static RAM |
| LH5116N-10 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:CMOS 16K (2K x 8) Static RAM |
| LH5116NA-10 | 功能描述:IC SRAM 16KBIT 100NS 24SOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
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