參數(shù)資料
型號(hào)： LH28F400SUE-LC15
英文描述： x8/x16 Flash EEPROM
中文描述： x8/x16閃存EEPROM
文件頁數(shù)： 7/56頁
文件大小： 373K
代理商： LH28F400SUE-LC15
- 7 -
LH28F160S5-L/S5H-L
block erase, full chip erase, (multi) word/byte write
or block lock-bit configuration. STS High Z indicates
that the WSM is ready for a new command, block
erase is suspended and (multi) word/byte write are
inactive, (multi) word/byte write are suspended, or
the device is in deep power-down mode. The other
3 alternate configurations are all pulse mode for
use as a system interrupt.
The access time is 70 ns (t
AVQV
) at the V
CC
supply
voltage range of 4.75 to 5.25 V over the temperature
range, 0 to +70°C (LH28F160S5-L)/
–
40 to +85°C
(LH28F160S5H-L). At 4.5 to 5.5 V V
CC
, the access
time is 80 ns/100 ns (LH28F160S5-L70/S5-L10) or
90 ns/100 ns (LH28F160S5H-L70/S5H-L10).
The Automatic Power Saving (APS) feature
substantially reduces active current when the
device is in static mode (addresses not switching).
In APS mode, the typical I
CCR
current is 1 mA at
5 V V
CC
.
When either CE
0
# or CE
1
#, and RP# pins are at
V
CC
, the I
CC
CMOS standby mode is enabled.
When the RP# pin is at GND, deep power-down
mode is enabled which minimizes power
consumption and provides write protection during
reset. A reset time (t
PHQV
) is required from RP#
switching high until outputs are valid. Likewise, the
device has a wake time (t
PHEL
) from RP#-high until
writes to the CUI are recognized. With RP# at
GND, the WSM is reset and the status register is
cleared.
Fig. 1 Memory Map
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
64 k-Byte Block
1FFFFF
1F0000
1EFFFF
1E0000
1DFFFF
1D0000
1CFFFF
1C0000
1BFFFF
1B0000
1AFFFF
1A0000
19FFFF
190000
18FFFF
180000
17FFFF
170000
16FFFF
160000
15FFFF
150000
14FFFF
140000
13FFFF
130000
12FFFF
120000
11FFFF
110000
10FFFF
100000
0FFFFF
0F0000
0EFFFF
0E0000
0DFFFF
0D0000
0CFFFF
0C0000
0BFFFF
0B0000
0AFFFF
0A0000
09FFFF
090000
08FFFF
080000
07FFFF
070000
06FFFF
060000
05FFFF
050000
04FFFF
040000
03FFFF
030000
02FFFF
020000
01FFFF
010000
00FFFF
000000
31
30
29
28
27
26
25
24
23
22
21
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18
17
16
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1
0
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PDF描述
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參數(shù)描述
LH28F400SUE-NC60 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory
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LH28F400SUHE-NC80 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory
LH28F400SUHN 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M Flash Memory
LH28F400SUHN-NC80 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M Flash Memory
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