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    參數(shù)資料
    型號: LH28F004SCHT-L12
    英文描述: x8 Flash EEPROM
    中文描述: x8閃存EEPROM的
    文件頁數(shù): 43/56頁
    文件大小: 373K
    代理商: LH28F004SCHT-L12
    LH28F160S5-L/S5H-L
    - 43 -
    SYMBOL
    t
    AVAV
    PARAMETER
    NOTE
    MIN.
    70
    MAX.
    MIN.
    80
    MAX.
    MIN.
    100
    MAX.
    Write Cycle Time
    RP# High Recovery to WE#
    Going Low
    CE# Setup to WE# Going Low
    WE# Pulse Width
    WP# V
    IH
    Setup to WE#
    Going High
    V
    PP
    Setup to WE# Going High
    Address Setup to WE#
    Going High
    Data Setup to WE# Going High
    Data Hold from WE# High
    Address Hold from WE# High
    CE# Hold from WE# High
    WE# Pulse Width High
    WE# High to STS Going Low
    Write Recovery before Read
    V
    PP
    Hold from Valid SRD,
    STS High Z
    WP# V
    IH
    Hold from Valid SRD,
    STS High Z
    NOTES :
    1.
    Read timing characteristics during block erase, full chip
    erase, (multi) word/byte write and block lock-bit
    configuration operations are the same as during read-
    only operations. Refer to
    Section 6.2.4
    CHARACTERISTICS
    " for read-only operations.
    2.
    Sampled, not 100% tested.
    3.
    Refer to
    Table 3
    for valid A
    IN
    and D
    IN
    for block erase,
    full chip erase, (multi) word/byte write or block lock-bit
    configuration.
    4.
    V
    PP
    should be held at V
    PPH1
    until determination of block
    erase, full chip erase, (multi) word/byte write or block
    lock-bit configuration success (SR.1/3/4/5 = 0).
    ns
    t
    PHWL
    2
    1
    1
    1
    μs
    t
    ELWL
    t
    WLWH
    10
    40
    10
    40
    10
    40
    ns
    ns
    t
    SHWH
    2
    100
    100
    100
    ns
    t
    VPWH
    2
    100
    100
    100
    ns
    t
    AVWH
    3
    40
    40
    40
    ns
    t
    DVWH
    t
    WHDX
    t
    WHAX
    t
    WHEH
    t
    WHWL
    t
    WHRL
    t
    WHGL
    3
    40
    5
    5
    10
    30
    40
    5
    5
    10
    30
    40
    5
    5
    10
    30
    ns
    ns
    ns
    ns
    ns
    ns
    ns
    90
    90
    90
    0
    0
    0
    t
    QVVL
    2, 4
    0
    0
    0
    ns
    t
    QVSL
    2, 4
    0
    0
    0
    ns
    VERSIONS
    V
    CC
    ±0.25 V
    V
    CC
    ±0.5 V
    (NOTE 5)
    LH28F160S5-L70
    (NOTE 6)
    LH28F160S5-L10
    (NOTE 6)
    LH28F160S5-L70
    UNIT
    V
    CC
    = 5.0±0.25 V, 5.0±0.5 V, T
    A
    = 0 to+70°C
    "
    AC
    5.
    See
    Fig. 12
    "
    Transient Input/Output Reference
    Waveform
    " and
    Fig. 14
    "
    Transient Equivalent Testing
    Load Circuit
    " (High Speed Configuration) for testing
    characteristics.
    See
    Fig. 13
    "
    Transient Input/Output Reference
    Waveform
    " and
    Fig. 14
    "
    Transient Equivalent Testing
    Load Circuit
    " (Standard Configuration) for testing
    characteristics.
    6.
    6.2.5 AC CHARACTERISTICS - WRITE OPERATIONS
    (NOTE 1)
    [LH28F160S5-L]
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