Figure 2-34. LatticeECP/EC Banks LatticeECP/EC devices contain two types of sysI/O buffer pai" />
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鍨嬭櫉锛� LFEC33E-4FN672C
寤犲晢锛� Lattice Semiconductor Corporation
鏂囦欢闋佹暩(sh霉)锛� 90/163闋�
鏂囦欢澶у皬锛� 0K
鎻忚堪锛� IC FPGA 32.8KLUTS 672FPBGA
妯欐簴鍖呰锛� 40
绯诲垪锛� EC
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RAM 浣嶇附瑷堬細 434176
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宸ヤ綔婧害锛� 0°C ~ 85°C
灏佽/澶栨锛� 672-BBGA
渚涙噳鍟嗚ō鍌欏皝瑁濓細 672-FPBGA锛�27x27锛�
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2-29
Architecture
LatticeECP/EC Family Data Sheet
Figure 2-34. LatticeECP/EC Banks
LatticeECP/EC devices contain two types of sysI/O buffer pairs.
1.
Top and Bottom sysI/O Buffer Pairs (Single-Ended Outputs Only)
The sysI/O buffer pairs in the top and bottom banks of the device consist of two single-ended output drivers
and two sets of single-ended input buffers (both ratioed and referenced). The referenced input buffer can also
be configured as a differential input.
The two pads in the pair are described as 鈥渢rue鈥� and 鈥渃omp鈥�, where the true pad is associated with the positive
side of the differential input buffer and the comp (complementary) pad is associated with the negative side of
the differential input buffer.
Only the I/Os on the top and bottom banks have programmable PCI clamps. These I/O banks also support hot
socketing with IDK less than 1mA. Note that the PCI clamp is enabled after VCC, VCCAUX and VCCIO are at valid
operating levels and the device has been configured.
2.
Left and Right sysI/O Buffer Pairs (Differential and Single-Ended Outputs)
The sysI/O buffer pairs in the left and right banks of the device consist of two single-ended output drivers, two
sets of single-ended input buffers (both ratioed and referenced) and one differential output driver. The refer-
enced input buffer can also be configured as a differential input. In these banks the two pads in the pair are
described as 鈥渢rue鈥� and 鈥渃omp鈥�, where the true pad is associated with the positive side of the differential I/O,
and the comp (complementary) pad is associated with the negative side of the differential I/O.
Only the left and right banks have LVDS differential output drivers. See the IDK specification for I/O leakage cur-
rent during power-up.
V
REF1(2)
GND
Bank
2
V
CCIO2
V
REF2(2)
V
REF1(3)
GND
Bank
3
V
CCIO3
V
REF2(3)
V
REF1(7)
GND
TOP
LEFT
RIGHT
BOTTOM
Bank
7
V
CCIO7
V
REF2(7)
V
REF1(6)
GND
Bank
6
V
CCIO6
V
REF2(6)
V
REF1(5)
GND
Bank 5
V
CCIO5
V
REF2(5)
V
REF1(4)
GND
Bank 4
V
CCIO4
V
REF2(4)
V
REF1(0)
GND
Bank 0
V
CCIO0
V
REF2(0)
V
REF1(1)
GND
Bank 1
V
CCIO1
V
REF2(1)
鐩搁棞(gu膩n)PDF璩囨枡
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