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參數(shù)資料
| 型號(hào)： | LET9130 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| 中文描述： | RF功率晶體管LDMOS的增強(qiáng)技術(shù) |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 57K |
| 代理商： | LET9130 |
1/6
PRELIMINARY DATA
February, 6 2003
LET9130
RF POWER TRANSISTORS
L
dmos
E
nhanced
T
echnology
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
P
OUT
=
25 W
EFF. = 29 %
EDGE: 920-960 MHz / 28 V
P
OUT
=
45 W
EFF. = 38 %
GSM: 920-960 MHz / 28 V
P
OUT
=
135 W
EFF. = 51 %
EXCELLENT THERMAL STABILITY
BeO FREE PACKAGE
INTERNAL INPUT MATCHING
ESD PROTECTION
DESCRIPTION
The
LET9130
is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The
LET9130
is designed for high gain and
broadband performance operating in common
source mode at 28 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
PIN CONNECTION
1. Drain
2. Source
3. Gate
1
2
3
M265
epoxy sealed
ORDER CODE
LET9130
BRANDING
LET9130
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Drain Current
P
DISS
Power Dissipation (@ Tc = 70
°
C)
Tj
Max. Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
65
V
-0.5 to +15
V
15
A
217
W
200
°
C
-65 to +200
°
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
0.6
°
C/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LET9150 | 功能描述:射頻MOSFET電源晶體管 RF Power LdmoST 150W 20 dB 860MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| LET9180 | 制造商:STMicroelectronics 功能描述:POWER R.F. - Boxed Product (Development Kits) 制造商:STMicroelectronics 功能描述:RF POWER TRANSISTOR LDMOS |
| LETBQ6WM | 制造商:OSRAM 功能描述: |
| LETD-2A | 制造商:IDEC Corporation 功能描述:E12/15 Screw Base LED Lamp |
| LETD-2G | 制造商:IDEC Corporation 功能描述:E12/15 Screw Base LED Lamp |
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