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參數(shù)資料
| 型號(hào)： | LE28FV4001T |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | 4MEG (52488 x 8 Bits) Flash Memory |
| 中文描述： | 4MEG（52488 × 8位）閃存 |
| 文件頁(yè)數(shù)： | 8/14頁(yè) |
| 文件大?。?/td> | 230K |
| 代理商： | LE28FV4001T |
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AC Electrical Characteristics
at Ta = 0 to +70°C, V
DD
= 3.3 V ± 0.3 V
AC Testing Conditions (See Figure 13)
Input rise and fall times: ................10 ns (max)
Output load:....................................1 TTL gate + 30 pF
Read Cycle
Erase/Programming Cycles
Note: All signals must hold valid logic levels during the setup and hold periods.
No. 5409-8/14
LE28FV4001M, T, R-20/25
LE28FV4001M, T, R
Parameter
Symbol
-20
-25
Unit
min
max
min
max
Read cycle time
t
RC
t
CE
t
AA
t
OE
t
CLZ
t
OLZ
t
CHZ
t
OHZ
t
OH
200
250
ns
CE access time
200
250
ns
Address access time
200
250
ns
OE access time
100
120
ns
Output low-impedance time from CE
0
0
ns
Output low-impedance time from OE
0
0
ns
Output high-impedance time from CE
60
60
ns
Output high-impedance time from OE
60
60
ns
Output valid time from address input
0
0
ns
LE28FV4001M, T, R
Parameter
Symbol
-20
-25
Unit
min
max
min
max
Sector erase cycle time
t
SE
t
BP
t
AS
t
AH
t
CS
t
CH
t
OES
t
OEH
t
CP
t
WP
t
WPH
t
CPH
t
DS
t
DH
t
RST
t
PCP
t
PCH
t
PAS
t
PAH
4
4
ms
Byte programming cycle time
35
35
μs
Address setup time
0
0
ns
Address hold time
50
100
ns
CE and WE setup time
0
0
ns
CE and WE hold time
0
0
ns
OE setup time
10
20
ns
OE hold time
10
20
ns
CE pulse width
100
160
ns
WE pulse width
100
160
ns
WE standby pulse width
50
50
ns
CE standby pulse width
50
50
ns
Data setup time
50
100
ns
Data hold time
10
20
ns
Reset recovery time
4
4
μs
CE pulse width in protect mode
100
100
ns
CE hold time in protect mode
150
150
ns
Address setup time in protect mode
30
30
ns
Address hold time in protect mode
100
100
ns
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