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參數(shù)資料
| 型號(hào)： | LE28DW8102T-90 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 元件分類： | EEPROM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁數(shù)： | 8/19頁 |
| 文件大?。?/td> | 338K |
| 代理商： | LE28DW8102T-90 |
8 Megabit FlashBank Memory
LE28DW8102T
8
SANYO Electric Co.,Ltd. Semiconductor Company 1-1-1 Sakata Oizumi Gunma Japan
R.1.01(2/15/2000) No.xxxx-8/19
: -65oC to +150oC
: -0.5V to V
DD
+ 0.5V
: -1.0V to V
DD
+ 1.0V
: 1.0W
: -40oC to +80oC
: 3.0V ± 0.3V
: 5 ns
: C
L
= 30 pF
[Absolute Maximum Stress Ratings]
Applied conditions greater than those listed under "absolute maximum Stress Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in
the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device
reliability.
Storage Temperature
D. C. Voltage on Any Pin to Ground Potential
Transient Voltage (<20 ns) on Any Pin to Ground Potential
Package Power Dissipation Capability (Ta = 25oC)
[Operating Range]
Ambient Temperature
V
DD
[AC condition of Test]
Input Rise/Fall Time
Output Load·
(See Figures 10 and 11)
[DC Operating Characteristics]
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