參數(shù)資料
型號(hào)： LDA10B
廠商： National Semiconductor Corporation
元件分類： 運(yùn)動(dòng)控制電子
英文描述： 1W, Bypass-Capacitor-less Audio Amplifier with Internal Selectable Gain
中文描述： 1W的，旁路電容器的音頻，內(nèi)置可選增益放大器
文件頁(yè)數(shù)： 3/15頁(yè)
文件大?。?/td> 468K
代理商： LDA10B
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 2)
Supply Voltage (Note 10)
Storage Temperature
Input Voltage
Power Dissipation (Notes 3, 11)
ESD Susceptibility (Note 4)
ESD Susceptibility (Note 5)
Junction Temperature
6.0V
65C to +150C
0.3V to V
DD
+0.3V
Internally Limited
2000V
200V
150C
Thermal Resistance
θ
JC
(MSOP)
θ
JA
(MSOP)
θ
JC
(LLP)
θ
JA
(LLP)
56C/W
190C/W
12C/W
63C/W
Operating Ratings
Temperature Range
T
MIN
≤
T
A
≤
T
MAX
Supply Voltage
40C
≤
T
A
≤
85C
2.6V
≤
V
DD
≤
5.5V
Electrical Characteristics V
DD
= 5V
The following specifications apply for the circuit shown in
Figure 1
, unless otherwise specified. Limits apply for T
A
= 25C.
(Notes 1, 2)
Symbol
Parameter
Conditions
LM4906
Units
(Limits)
Typical
(Note 6)
3.5
4
0.1
7
Limit
(Notes 7, 8)
7
8
2
35
I
DD
Quiescent Power Supply Current
V
IN
= 0V, I
o
= 0A, No Load
V
IN
= 0V, I
o
= 0A, 8
Load
V
SD
= GND
mA (max)
mA (max)
μA (max)
mV (max)
I
SD
V
OS
Shutdown Current
Output Offset Voltage
P
o
Output Power
THD+N = 1% (max); f = 1 kHz
R
L
= 8
1.0
0.9
W (min)
T
WU
THD+N
Wake-up time
Total Harmonic Distortion+Noise
5
ms
%
P
o
= 0.4 Wrms; f = 1kHz
V
ripple
= 200mV sine p-p
Input terminated with 10
Gain at 6dB
SD Pin High = Part On
SD Pin Low = Part Off
0.2
PSRR
Power Supply Rejection Ratio
67 (f =
217Hz)
70 (f = 1kHz)
1.5
1.3
dB
V
SDIH
V
SDIL
Shutdown Voltage Input High
Shutdown Voltage Input Low
V (min)
V (max)
Electrical Characteristics V
DD
= 3V
The following specifications apply for the circuit shown in
Figure 1
, unless otherwise specified. Limits apply for T
A
= 25C.
(Notes 1, 2)
Symbol
Parameter
Conditions
LM4906
Units
(Limits)
Typical
(Note 6)
2.6
3
0.1
7
Limit
(Notes 7, 8)
6
7
2
35
I
DD
Quiescent Power Supply Current
V
IN
= 0V, I
o
= 0A, No Load
V
IN
= 0V, I
o
= 0A, 8
Load
V
SD
= GND
mA (max)
mA (max)
μA (max)
mV (max)
I
SD
V
OS
Shutdown Current
Output Offset Voltage
P
o
Output Power
THD+N = 1% (max); f = 1 kHz
R
L
= 8
390
mW
T
WU
THD+N
Wake-up time
Total Harmonic Distortion+Noise
4
ms
%
P
o
= 0.15 Wrms; f = 1kHz
V
ripple
= 200mV sine p-p
Input terminated with 10
Gain at 6dB
SD Pin High = Part On
SD Pin Low = Part Off
0.1
PSRR
Power Supply Rejection Ratio
71 (f =
217Hz)
73 (f = 1kHz)
1.1
0.9
dB
V
SDIH
V
SDIL
Shutdown Voltage Input High
Shutdown Voltage Input Low
V (min)
V (max)
L
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