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參數(shù)資料
| 型號(hào)： | LD1117F12 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類(lèi)： | 其它接口 |
| 英文描述： | TERMINAL |
| 中文描述： | IGBT模塊 |
| 文件頁(yè)數(shù)： | 4/28頁(yè) |
| 文件大?。?/td> | 624K |
| 代理商： | LD1117F12 |
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LD1117 SERIES
4/28
Table 4: Electrical Characteristics Of LD1117#12
(refer to the test circuits, T
J
= 0 to 125°C,
C
O
= 10 μF, R = 120
between GND and OUT pins, unless otherwise specified)
Table 5: Electrical Characteristics Of LD1117#18
(refer to the test circuits, T
J
= 0 to 125°C,
C
O
= 10 μF unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
O
V
O
V
O
V
O
V
O
V
O
V
in
I
adj
I
adj
Output Voltage
Reference Voltage
Line Regulation
Load Regulation
Temperature Stability
Long Term Stability
Operating Input Voltage
Adjustment Pin Current
Adjustment Pin Current
Change
V
in
= 3.2 V I
O
= 10 mA
I
O
= 10 to 800 mA V
in
- V
O
= 1.4 to 10 V
V
in
- V
O
= 1.5 to 13.75 V
V
in
- V
O
= 3 V
T
J
= 25°C
1.188
1.140
1.20
1.20
0.035
0.1
0.5
0.3
1.212
1.260
0.2
0.4
V
V
%
%
%
%
V
μA
μA
I
O
= 10 mA
I
O
= 10 to 800 mA
1000 hrs, T
J
= 125°C
15
120
5
V
in
≤
15 V
V
in
- V
O
= 1.4 to 10 V
I
O
= 10 to 800 mA
V
in
= 15 V
V
in
- V
O
= 5 V
B =10Hz to 10KHz
I
O
= 40 mA f = 120Hz
V
in
- V
O
= 3 V
I
O
= 100 mA
I
O
= 500 mA
I
O
= 800 mA
T
a
= 25°C 30ms Pulse
60
1
I
O(min)
I
O
eN
SVR
Minimum Load Current
Output Current
Output Noise (%V
O
)
Supply Voltage Rejection
2
5
mA
mA
%
dB
T
J
= 25°C
T
J
= 25°C
800
950
0.003
75
1300
T
J
= 25°C
V
ripple
= 1 V
PP
60
V
d
Dropout Voltage
1
1.1
1.15
1.2
0.1
V
1.05
1.10
0.01
Thermal Regulation
%/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
O
V
O
V
O
V
O
V
O
V
O
V
in
I
d
I
O
eN
SVR
Output Voltage
Output Voltage
Line Regulation
Load Regulation
Temperature Stability
Long Term Stability
Operating Input Voltage
Quiescent Current
Output Current
Output Noise Voltage
Supply Voltage Rejection
V
in
= 3.8 V I
O
= 10 mA
I
O
= 0 to 800 mA
V
in
= 3.3 to 8 V
V
in
= 3.3 V
T
J
= 25°C
1.78
1.76
1.8
1.82
1.84
6
10
V
V
V
in
= 3.3 to 8 V
I
O
= 0 mA
I
O
= 0 to 800 mA
1
1
mV
mV
%
%
V
mA
mA
μ
V
dB
0.5
0.3
1000 hrs, T
J
= 125°C
I
O
= 100 mA
V
in
≤
8 V
V
in
= 6.8 V T
J
= 25°C
B =10Hz to 10KHz
I
O
= 40 mA f = 120Hz
V
in
= 5.5 V V
ripple
= 1 V
PP
I
O
= 100 mA
I
O
= 500 mA
I
O
= 800 mA
T
a
= 25°C 30ms Pulse
10
10
5
800
950
100
75
1300
T
J
= 25°C
T
J
= 25°C
60
V
d
Dropout Voltage
1
1.1
1.15
1.2
0.1
V
1.05
1.10
0.01
Thermal Regulation
%/W
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