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參數(shù)資料
| 型號(hào)： | LC866556B |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | 8-Bit Single Chip Microcontroller with On-Chip 56K（57344 ×8 bits）-Byte ROM and 1152（1152 ×8 bits）-Byte RAM(8位單片微控制器（帶片上56K（57344 ×8 bits）字節(jié)ROM和1152（1152 ×8 bits）字節(jié)RAM）) |
| 中文描述： | 8位單片機(jī)微控制器的片上速度56K（57344 × 8位）字節(jié)ROM和1152（1152 × 8位）字節(jié)的RAM（8位單片微控制器（帶片上速度56K（57344 × 8位）字節(jié)光盤和1152（1152 × 8位）字節(jié)的RAM）） |
| 文件頁(yè)數(shù)： | 14/21頁(yè) |
| 文件大?。?/td> | 636K |
| 代理商： | LC866556B |
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LC866560/56B
14/21
Ratings
typ.
Parameter
Symbol
Pins
Conditions
VDD[V]
4.5-6.0
min.
-1
max.
unit
IOFF(1)
Output P-ch Tr. OFF
VOUT=VSS
Output P-ch Tr. OFF
VOUT=VDD-40V
Output P-ch Tr. OFF
Using as input ports
Output off-
leak current
IOFF(2)
S0/T0 to S6/T6, S16 to
S51 without pull-down
resistor
4.5-6.0
-30
μ
A
Resistance of
the low level
hold Tr.
High voltage
pull-down
resistor
VP pull-down
resistor
Hysteresis
voltage
Rinpd
S16 to S51
4.5-6.0
200
k
Rpd
S0/T0 to S15/T15, S16
to S51 with
pull-down resistor
Vp
Output P-ch Tr. OFF
VOUT=3V
Vp=-30V
VSS=GND
Vp=-30V
Output disable
5.0
60
100
200
Rvppd
5.0
60
100
200
VHIS
Port 1
Ports 70,71,72,73,75
RES
All pins
4.5-6.0
0.1VDD
V
Pin capacitance CP
f=1MHz
Unmeasurement
terminals for the
input are set to
VSS level.
Ta=25
°
C
4.5-6.0
10
pF
4. Serial Input/Output Characteristics at Ta=-30
°
C to +70
°
C, VSS1=VSS2=0V
Ratings
typ.
Parameter
Symbol
Pins
Conditions
VDD[V]
4.5-6.0
min.
2
1
max.
unit
Cycle
Low Level
pulse width
High Level
pulse width
Cycle
Low Level
pulse width
High Level
pulse width
Data set up time
Data hold time
Output delay time
(Serial clock is
external clock)
Output delay time
(Serial clock is
internal clock)
tCKCY(1)
tCKL(1)
I
tCKH(1)
SCK0,
SCK1
Refer to figure 5.
1
tCKCY(2)
tCKL(2)
2
1/2
tCKCY
1/2
tCKCY
S
O
tCKH(2)
SCK0,
SCK1
Use pull-up
resistor (1k
)
when opendrain
output.
Refer to figure 5.
Data set-up to
SCK0,1
Data hold from
SCK0,1
Refer to figure 5.
Use pull-up
resistor (1k
)
when open drain
output.
Data hold from
SCK0,1
Refer to figure 5.
4.5-6.0
tCYC
tICK
0.1
S
tCKI
SI0,SI1
SB0,SB1
4.5-6.0
0.1
tCKO(1)
7/12
tCYC
+0.2
S
tCKO(2)
SO0,SO1
SB0,SB1
4.5-6.0
1/3
tCYC
+0.2
μ
s
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