參數(shù)資料
型號(hào): LC78711
廠商: Sanyo Electric Co.,Ltd.
英文描述: Graphics Display Processor
中文描述: 圖形顯示處理器
文件頁(yè)數(shù): 6/43頁(yè)
文件大?。?/td> 781K
代理商: LC78711
No. 5476-6/43
LC78711E
Continued from preceding page.
Pin no.
Pin
Pin type
I/O
Polarity
Pin function
51
TEST12
Test input
I
Positive
Test input. Must be connected to ground during normal operation.
52
PALID
PAL mode external control input
I
Positive
External superimpose function control input for PAL mode
(A pull-up resistor is built in.)
53
HRESET
External horizontal
synchronization input
I
Negative
External horizontal synchronization timing control input
Subcarrier clock output
NTSC mode: 3.579545 MHz
PAL mode: 4.433619 MHz
54
FSCO
Clock output
O
Positive
55
VRESET
External vertical
synchronization input
I
Negative
External vertical synchronization timing control input
56
INIT
Initialization input
I
Negative
System initialization signal input
57
RESET
Reset input
I
Negative
System reset signal input
58
N/P1
NTSC/PAL selection
I
Positive
NTSC/PAL selection input (RGB encoder block)
High: NTSC, low: PAL
59
N/P2
NTSC/PAL selection
I
Positive
NTSC/PAL selection input (decoder block)
High: NTSC, low: PAL
60
SON
Superimpose control
I
Positive
Superimpose function on/off control input
High: superimpose on
61
XIN2
Crystal oscillator element
connections
I
Connections for the PAL crystal oscillator element
(4·fsc = 17.734476 MHz)
62
XOUT2
O
63
XIN1
Crystal oscillator element
connections
I
Connections for the NTSC crystal oscillator element
(4·fsc = 14.31818 MHz)
64
XOUT1
O
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Random read/write cycle
t
RC
t
PC
t
RAC
t
CAC
t
OFF
t
RP
t
RAS
t
RASP
t
RSH
t
CSH
t
CAS
t
CPN
t
CP
t
ASR
t
RAH
t
ASC
t
CAH
t
RCS
t
RCH
t
RRH
t
WCS
t
WCH
t
WP
t
DS
t
DH
t
CSR
t
CHR
t
RPC
t
REF
250
ns
Page mode cycle
130
ns
RAS access time
210
ns
CAS access time
10
ns
Output turn off delay
20
ns
RAS precharge time
100
ns
RAS pulse width
120
ns
RAS pulse width (page mode)
18000
ns
RAS hold time
60
ns
CAS hold time
120
ns
CAS pulse width
60
ns
CAS precharge time
50
ns
CAS precharge time
Page mode
50
ns
Row address setup time
100
ns
Row address hold time
50
ns
Column address setup time
0
ns
Column address hold time
50
ns
Read command setup time
150
ns
Read command hold time
Referenced to CAS
120
ns
Read command hold time
Referenced to RAS
120
ns
Write command setup time
100
ns
Write command hold time
50
ns
Write command pulse width
150
ns
Write data setup time
100
ns
Write data setup time
100
ns
CAS setup time
CAS before RAS
50
ns
CAS hold time
CAS before RAS
50
ns
RAS precharge CAS active time
50
ns
Refresh time
3.5
ms
Timing Characteristics (DRAM access timing)
at Ta = +25°C, DV
DD
1 = 5 V
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