
No. 6477-4/12
LC4132C
Note: 6. The clock rise time (tr) and the clock fall time (tf) must meet the conditions (1) and (2) shown below.
fcp
(1) tr, tf < ————————————
(2) tr, tf
≤
50 ns
2
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
CP clock frequency
fcp
CP
10
MHz
High-level load pulse width
tw (ldH)
LOAD
50
ns
High-level clock pulse width
tw (cpH)
CP
37
ns
Low-level clock pulse width
tw (cpL)
CP
37
ns
LOAD/CP setup time
tsu (ld)
LOAD, CP
100
ns
LOAD/CP hold time
tho (ld)
LOAD, CP
350
ns
DATA/CP setup time
tsu (cp)
CP, D0 to D7
35
ns
DATA/CP hold time
tho (cp)
CP, D0 to D7
35
ns
EIO input setup time
tsu (ei)
CP, EIO1, EIO2
30
ns
Clock rise time
tr
LOAD, CP
*
6
50
ns
Clock fall time
tf
LOAD, CP
*
6
50
ns
V
DD
= 2.7 to 4.5 V, Ta = –20 to +75°C, V
SS
= 0 V
Notes: 7. D0 to D7, LOAD, CP, R/L, M, DISP, EIO1, 2, BS
8. V
O
is the voltage applied by an on-state output, V0 = V
DDH
, V2 = 18/20 (V
DDH
– V
SS
), V3 = 2/20 (V
DDH
– V
SS
), V5 = V
SS
.
9. Measured when either LOAD = 28 kHz, CP = 10 MHz, and M = 75 Hz, or with no load and input at V
IH
= V
DD
or V
IL
= V
SS
.
10. The current drain in standby mode. Or when EIOn (input) = V
DD
.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Input high-level voltage
I
IH
I
IL
1
V
OH
V
OL
V
IN
= V
DD
*
7
V
IN
= V
SS
*
7
I
O
= –0.4 mA: EIO1, EIO2
I
O
= 0.4 mA: EIO1, EIO2
V
DDH
= 36 V
*
8
V0 – V
O
= 0.5 V, V2 – V
O
= 0.5 V
V
O
– V3 = 0.5 V, V
O
– V5 = 0.5 V
: O1 to O240
5
μA
Input low-level voltage
–5
μA
Output high-level voltage
V
DD
– 0.4
V
DD
0.4
V
Output low-level voltage
V
SS
V
Output on resistance
R
OUT
1
3
k
I
DD
V
DD
= 2.7 to 5.5 V
V
DD
= 2.7 to 5.5 V, V
DDH
= 32 V
*
9
V
DD
= 5 V ±10%, V
DDH
= 36 V
*
10
5.0
mA
Current drain
I
DDH
3.0
mA
3.0
mA
I
ST
500
μA
Electrical Characteristics at Ta = –20 to +75°C, V
DD
= 2.7 to 5.5 V, V
SS
= 0 V