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Ordering number : EN
*
5085A
32896HA (OT)/33195TH (OT) No. 5085-1/29
Overview
The LC322271J, M and T is a CMOS dynamic RAM
operating on a single 5 V power source and having a
131072 words
×
16 bits configuration. Equipped with
large capacity capabilities, high speed transfer rates and
low power dissipation, this series is suited for a wide
variety of applications ranging from computer main
memory and expansion memory to commercial
equipment.
Address input utilizes a multiplexed address bus which
permits it to be enclosed in a compact plastic package of
SOJ 40-pin, SOP 40-pin, and TSOP 44-pin . Refresh rates
are within 8 ms with 512 row address (A0 to A7, A8R)
selection and support Row Address Strobe (RAS)-only
refresh, Column Address Strobe (CAS)-before-RAS
refresh and hidden refresh settings. There are functions
such as fast page mode, read-modify-write and byte write.
The pin assignment follows the JEDEC 1 M DRAM
(65536 words
×
16 bits, 1CAS/2WE) standard.
Features
131072 words
×
16 bits configuration.
Single 5 V ± 10% power supply.
All input and output (I/O) TTL compatible.
Supports fast page mode, read-modify-write and byte
write.
Supports output buffer control using early write and
Output Enable (OE) control.
8 ms refresh using 512 refresh cycles.
Supports RAS-only refresh, CAS-before-RAS refresh
and hidden refresh.
Follows the JEDEC 1 M DRAM (65536 words
×
16
bits, 1CAS/2WE) standard.
RAS access time/column address time/CAS access
time/cycle time/power dissipation
Package:
SOJ 40-pin (400 mil) plastic package : LC322271J
SOP 40-pin (450 mil) plastic package: LC322271M
TSOP 44-pin (400 mil) plastic package : LC322271T
Package Dimensions
unit: mm
3200-SOJ40
Preliminary
SANYO: SOJ40
[LC322271J]
LC322271J, M, T-70/80
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-0005 JAPAN
2 MEG (131072 words
×
16 bits) DRAM
Fast Page Mode, Byte Write
CMOS LSI
Parameter
LC322271J, M, T
-70
-80
RAS access time
70 ns
80 ns
Column address access time
35 ns
45 ns
CAS access time
20 ns
30 ns
Cycle time
130 ns
150 ns
Power dissipation (max.)
During operation
688 mW
633 mW
During standby
5.5 mW (CMOS level)/11 mW (TTL level)