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參數(shù)資料
| 型號： | LBAS16WT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Silicon Switching Diode |
| 中文描述： | 硅開關(guān)二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 149K |
| 代理商： | LBAS16WT1 |
LESHAN RADIO COMPANY, LTD.
LBAS16WT1–1/4
Silicon Switching Diode
Symbol
Max
Unit
Continuous Reverse Voltage
V
R
75
V
Recurrent Peak Forward Current
I
R
200
mA
Peak Forward Surge Current
Pulse Width = 10
μ
s
I
FM(surge)
500
mA
Total Power Dissipation, One Diode Loaded
T
A
= 25
°
C
Derate above 25
°
C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
P
D
200
1.6
mW
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
R
θ
JA
0.625
°
C/mW
DEVICE MARKING
L
BAS16WT1 = A6
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Forward Voltage
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 50 mA)
(I
F
= 150 mA)
V
F
—
—
—
—
715
866
1000
1250
mV
Reverse Current
(V
R
= 75 V)
(V
R
= 75 V, T
J
= 150
°
C)
(V
R
= 25 V, T
J
= 150
°
C)
I
R
—
—
—
1.0
50
30
μ
A
Capacitance
(V
R
= 0, f = 1.0 MHz)
C
D
—
2.0
pF
Reverse Recovery Time
(I
F
= I
R
= 10 mA, R
L
= 50
) (Figure 1)
t
rr
—
6.0
ns
Stored Charge
(I
F
= 10 mA to V
R
= 6.0 V, R
L
= 500
) (Figure 2)
QS
—
45
PC
Forward Recovery Voltage
(I
F
= 10 mA, t
r
= 20 ns) (Figure 3)
V
FR
—
1.75
V
3
CATHODE
1
ANODE
1
3
2
SC-70/SOT-323
LBAS16WT1
Rating
MAXIMUM RATINGS (T
A
= 25
o
C)
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