
No. 5640-2/6
LA5621M, 5621V
Package Dimensions
unit: mm
3034A-MFP14
unit: mm
3178-SSOP16
1
14
7
8
1.24
1.27
0.35
0.15
10.1
1
1
0
4
5
6
0
[LA5621M]
1
8
9
16
6
0
4
5.4
0
1
1
0.65
0.22
0.43
0.15
SANYO: SSOP16
[LA5621V]
SANYO: MFP14
Parameter
Symbol
Conditions
Ratings
Unit
Maximum supply voltage
V
CC
max
11
V
Allowable power dissipation
Pd max
LA5621M
320
mW
LA5621V
250
mW
Operating temperature
Topr
–20 to +75
°C
Storage temperature
Tstg
–55 to +125
°C
Specifications
Maximum Rating
at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
Supply voltage 1
V
CC
1
V
CC
2
V
CC
1
≤
V
CC
2
V
CC
1
≤
V
CC
2
*
1 to 11
V
Supply voltage 2
2 to 5.5
V
Allowable Operating Conditions
at Ta = 25°C
Note:
*
When V
CC
1 < 2 V, only the gate block (external power MOSFET drive) operates.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Current drain 1-1
(During set operation discharge)
I
CC
1-1
V
CC
1 in current, V
CHG
= V
CC
2,
SW4, 6: on, SW5: off
90
120
μA
Current drain 2-1
(During set operation discharge)
I
CC
2-1
V
CC
2 in current, V
CHG
= V
CC
2,
SW4, 6: on, SW5: off
20
26
μA
Current drain 1-2
(During charging outside set)
I
CC
1-2
V
CC
2 in current, V
CHG
= V
CC
2,
SW4, 5: on
20
26
μA
Current drain 2-2
(During charging)
I
CC
2-2
V
CC
2 in current
SW5: on, V
CPU
: L, V
GATE
:H
600
800
μA
[Output pin block]
High-level CPU pin
V
CPU-H
V
IN
1
–
= 15 mV, V
IN
1
+
= 11 mV,
V
CHG
= V
CC
2, SW4: off, SW5: on
V
IN
1
–
= 15 mV, V
IN
1
+
= 23 mV,
V
CHG
= V
CC
2, SW4: off, SW5: on
V
IN
1
–
= 15 mV, V
IN
1
+
= 23 mV,
V
CHG
= V
CC
2, SW4: off, SW5: on
SW1, 2, 5, 6: on
V
CC
2 – 0.15
V
Low-level CPU pin
V
CPU-L
0.2
V
CPU pin sink current
V
CPU-SINK
35
μA
High-level BIAS1 pin
V
BIAS
1-H
V
CC
2 – 0.15
V
High-level BIAS2 pin
V
BIAS
2-H
SW1, 2, 5, 6: on, V
IN
2
-
= 15 mV,
V
IN
2
+
= 11 mV
SW1, 2, 5, 6: on,
V
IN
1
–
= 15 mV, V
IN
1
+
= 23 mV
V
CC
2 – 0.15
V
Low-level BIAS2 pin leak current
I
BIAS
2-LK
10
μA
Electrical Characteristics
at Ta = 25°C, V
CC
1 = 5.5 V, V
CC
2 = 3.15 V (unless otherwise specified)
Continued on next page.