參數(shù)資料
型號: L9611C
廠商: 意法半導(dǎo)體
英文描述: PWM POWER MOS CONTROLLER
中文描述: 功率MOS的PWM控制器
文件頁數(shù): 6/12頁
文件大?。?/td> 198K
代理商: L9611C
Figure 2 :
TheTypical Waveformsfor the Power Limitation Function.
SHORT CIRCUIT CURRENT REGULATION
The maximum load current in the short circuit con-
dition can be chosen by the value of the current
sensingresistor R
S
accordingto :
I
SC
= V
SI
/R
S
Two identical V
S
compatiblecomparators are pro-
vided to realize the short circuit protection.
After reaching the lower threshold voltage (typical
value V
SI
-10 mV), the first comparatorenablesthe
timer and the gateis driven with the fullcontinuous
pump voltage : when the upper threshold voltage
valueis reachedthe second comparatormaintains
the chosenI
SC
drivingtheNMOSgatein continuous
mode.
This function - showed in fig. 3 - speeds up the
switch on phase fora lamp as a load.
BANDGAP VOLTAGEREFERENCE
The circuit provides a referencevoltage whichmay
be usedas controlinputvoltagethrougha resistive
divider.Thisreferenceis protectedagainsttheshort
circuit current.
CHARGE PUMP
The charge pump circuit holds the N-MOS gate
abovethesupplyvoltageduringtheONphase.This
circuitconsistsofanRCastablewhichdrivesacom-
paratorwith a push-pulloutput stage. The external
chargepumpcapacitorC
P
mustbeat least equalto
the NMOS parasiticinput capacitance.
For fastgatevoltagevariationC
P
mustbeincreased
orthebootstrapfunctioncanbeused.Thebootstrap
capacitor should be at least 10 times greater than
the powerMOSparasitic capacitance.
The charge pumpvoltage V
PUMP
canreach to :
V
PUMP
= 2 V
S
- V
BE
- V
CESAT
The circuitis disabledif the supplyvoltageis higher
thanV
SH
.
L9610C - L9611C
6/12
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