參數(shù)資料
型號(hào)： L7583B
廠商： Lineage Power
英文描述： Line Card Access Switch(線卡存取開(kāi)關(guān))
中文描述： 線卡接入交換機(jī)（線卡存取開(kāi)關(guān)）
文件頁(yè)數(shù)： 4/20頁(yè)
文件大小： 404K
代理商： L7583B
4
Lucent Technologies Inc.
Data Sheet
November 1999
L7583A/B/C/D Line Card Access Switch
Handling Precautions
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid expo-
sure to electrostatic discharge (ESD) during handling and mounting. Lucent Technologies Microelectronics Group
employs a human-body model (HBM) and a charged-device model (CDM) for ESD-susceptibility testing and pro-
tection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used to define the
model. No industry-wide standard has been adopted for CDM. However, a standard HBM (resistance = 1500
,
capacitance = 100 pF) is widely used and therefore can be used for comparison purposes. The HBM ESD thresh-
old presented here was obtained by using these circuit parameters.
Table 3. HBM ESD Threshold Voltage
Electrical Characteristics
T
A
= –40 °C to +85 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are
the result of engineering evaluations. Typical values are for information purposes only and are not part of the test-
ing requirements.
Table 4. Power Supply Specifications
* V
BAT
is used only as a reference for internal protection circuitry. If V
BAT
rises above –10 V, the device will enter an all OFF state and remain in
this state until the battery voltage drops below –15 V.
Table 5. Test In Switches, 1 and 2
* Applied voltage is 100 Vp-p square wave at 100 Hz.
Device
L7583
Rating
1000 V
Supply
V
DD
Min
4.5
Typ
5
Max
5.5
Unit
V
Supply
V
BAT
*
Min
–19
Typ
—
Max
–72
Unit
V
Parameter
Test Condition
Measure
Min Typ Max
Unit
OFF-state Leakage Current:
+25 °C
+85 °C
–40 °C
Vswitch (differential) = –320 V to Gnd
Vswitch (differential) = –60 V to +260 V
Vswitch (differential) = –330 V to Gnd
Vswitch (differential) = –60 V to +270 V
Vswitch (differential) = –310 V to Gnd
Vswitch (differential) = –60 V to +250 V
Iswitch
Iswitch
Iswitch
—
—
—
—
—
—
1
1
1
μA
μA
μA
ON-resistance:
+25 °C
+85 °C
–40 °C
Isolation:
+25 °C
Iswitch (on) = ±5 mA, ±10 mA
Iswitch (on) = ±5 mA, ±10 mA
Iswitch (on) = ±5 mA, ±10 mA
V
ON
V
ON
V
ON
—
—
—
45
—
33
—
70
—
+85 °C
–40 °C
Vswitch (both poles) = ±320 V,
Logic inputs = Gnd
Vswitch (both poles) = ±330 V,
Logic inputs = Gnd
Vswitch (both poles) = ±310 V,
Logic inputs = Gnd
—
Iswitch
Iswitch
Iswitch
—
—
—
—
—
—
1
1
1
μA
μA
μA
dV/dt Sensitivity*
—
—
200
—
V/μs
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