參數(shù)資料
型號(hào)： L6743Q
廠商： 意法半導(dǎo)體
英文描述： High current MOSFET driver
中文描述： 高電流MOSFET驅(qū)動(dòng)器
文件頁數(shù)： 10/17頁
文件大?。?/td> 282K
代理商： L6743Q
Device description and operation
L6743, L6743Q
10/17
When designing an application based on L6743, L6743Q it is recommended to take into
consideration the effect of external gate resistors on the power dissipated by the driver.
External gate resistors helps the device to dissipate the switching power since the same
power P
SW
will be shared between the internal driver impedance and the external resistor
resulting in a general cooling of the device.
Referring to
Figure 6
, classical mosfet driver can be represented by a push-pull output stage
with two different mosfets: P-MOSFET to drive the external gate high and N-MOSFET to
drive the external gate low (with their own R
dsON
: R
hi_HS,
R
lo_HS
, R
hi_LS,
R
lo_LS
). The
external power mosfet can be represented in this case as a capacitance (C
G_HS
, C
G_LS
)
that stores the gate-charge (Q
G_HS
, Q
G_LS
) required by the external power MOSFET to
reach the driving voltage (PVCC for HS and VCC for LS). This capacitance is charged and
discharged at the driver switching frequency F
SW
.
The total power Psw is dissipated among the resistive components distributed along the
driving path. According to the external Gate resistance and the power-MOSFET intrinsic
gate resistance, the driver dissipates only a portion of Psw as follow:
The total power dissipated from the driver can then be determined as follow:
Figure 6.
Equivalent circuit for MOSFET drive
P
SW
HS
–
1
2
--
C
GHS
PVCC
2
Fsw
R
R
GateHS
R
hiHS
R
iHS
+
+
---------------------------------------------------------------
R
R
GateHS
R
loHS
R
iHS
+
+
---------------------------------------------------------------
+
=
P
SW
LS
–
1
2
--
C
GLS
VCC
2
Fsw
R
R
GateLS
R
hiLS
R
iLS
+
+
-------------------------------------------------------------
R
R
GateLS
R
loLS
R
iLS
+
+
-------------------------------------------------------------
+
=
P
P
DC
P
SW
HS
–
P
SW
LS
–
+
+
=
R
GATELS
R
ILS
C
GLS
VCC
LS DRIVER
LS MOSFET
GND
LGATE
R
GATEHS
R
IHS
C
GHS
BOOT
HS DRIVER
HS MOSFET
PHASE
HGATE
VCC
R
h
R
l
R
h
R
l
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
L6743QTR 功能描述:功率驅(qū)動(dòng)器IC SnglPphase Dual MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
L6743TR 功能描述:功率驅(qū)動(dòng)器IC SnglPphase Dual MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
L6747A 制造商:STMicroelectronics 功能描述:MOSFET DRVR 3.5A 2-OUT Hi/Lo Side Inv/Non-Inv 8-Pin VFDFPN EP Tube 制造商:STMicroelectronics 功能描述:HANDHELD & COMPUTER PM - Rail/Tube 制造商:STMicroelectronics 功能描述:N-Ch FET PWM Driver Dual 5V to 12V HC
L6747ATR 功能描述:功率驅(qū)動(dòng)器IC Dual Mosfet Driver 5V to 12 V Flex Gate RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
L6747C 制造商:STMicroelectronics 功能描述:MOSFET DRVR 3.5A 2-OUT Hi/Lo Side Inv/Non-Inv 8-Pin VFDFPN EP Tube 制造商:STMicroelectronics 功能描述:HANDHELD & COMPUTER PM - Rail/Tube 制造商:STMicroelectronics 功能描述:N-Ch FET PWM Driver Dual 5V to 12V HC
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