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參數(shù)資料
| 型號： | L6571BD |
| 廠商： | 意法半導體 |
| 英文描述： | HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR |
| 中文描述： | 高壓半橋驅動器，振蕩器 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 60K |
| 代理商： | L6571BD |
OSCILLATOR FREQUENCY
The frequency of the internal oscillator can be
programmedusingexternalresistor andcapacitor.
The nominal oscillator frequency can be calcu-
lated using the following equation:
f
OSC
=
1
2
R
F
C
F
In 2
=
1
1.3863
R
F
C
F
where R
F
and C
F
are the external resistor and ca-
pacitor
ELECTRICALCHARACTERISTICS
(V
S
=12V;V
BOOT
- V
OUT
=12V;T
j
= 25
°
C;unlessotherwisespecified.)
Symbol
V
SUVP
V
SUVN
V
SUVH
V
CL
I
SU
I
q
I
BOOTLK
Pin
1
Parameter
Test Condition
Min.
8.3
7.3
0.7
14.6
Typ.
9
8
1
15.6
150
500
Max.
9.7
8.7
1.3
16.6
250
700
5
Unit
V
V
V
V
μ
A
μ
A
μ
A
V
S
Turn On Threshold
V
S
Turn Off Threshold
V
S
Hysteresis
V
S
Clamping Voltage
Start Up Current
Quiescent Current
Leakage Current BOOTpin vs
GND
Leakage CurrentOUTpinvs GND
High Side Driver Source Current
High Side Driver Sink Current
Low Side Driver Source Current
Low Side Driver Sink Current
RF High Level Output Voltage
RF Low Level Output Voltage
CF Upper Threshold
CF Lower Threshold
Internal Dead Time
I
S
= 5mA
V
S
< V
SUVN
V
S
> V
SUVP
V
BOOT
= 580V
8
I
OUTLK
I
HVG SO
I
HVG SI
I
LVGSO
I
LVG SI
V
RFON
V
RF OFF
V
CFU
V
CFL
t
d
6
7
V
OUT
= 562V
V
HVG
= 6V
V
HVG
= 6V
V
LVG
= 6V
V
LVG
= 6V
I
RF
= 1mA
I
RF
= -1mA
5
μ
A
mA
mA
mA
mA
V
mV
V
V
μ
s
μ
s
110
190
110
190
V
S
-0.05
50
7.7
3.80
0.85
0.50
0.45
175
275
175
275
5
2
V
S
-0.2
200
8.2
4.3
1.65
0.94
0.55
3
7.95
4.05
1.25
0.72
0.5
L6571A
L6571B
D
C
Duty Cycle, Ratio Between
Dead Time + Conduction Time
of High Side and Low Side
Drivers
Average Current from Vs
Oscillation Frequency
I
AVE
fout
1
6
No Load, fs = 60KHz
RT = 12k
CT = 1nF
1.2
60
1.5
63
mA
kHz
57
T1
T
C
V
S
V
CF
LVG
D96IN434
V
SUVP
Figure 2:
WAVEFORMS
L6571A - L6571B
3/7
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